Allicdata Part #: | NVTFS5124PLWFTWG-ND |
Manufacturer Part#: |
NVTFS5124PLWFTWG |
Price: | $ 0.18 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET P-CH 60V 8A U8FL |
More Detail: | P-Channel 60V 2.4A (Ta) 3W (Ta), 18W (Tc) Surface ... |
DataSheet: | NVTFS5124PLWFTWG Datasheet/PDF |
Quantity: | 1000 |
5000 +: | $ 0.16275 |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Package / Case: | 8-PowerWDFN |
Supplier Device Package: | 8-WDFN (3.3x3.3) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 3W (Ta), 18W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 250pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 6nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 260 mOhm @ 3A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 2.4A (Ta) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The NVTFS5124PLWFTWG is a single junction field-effect transistor or normally-offMosfet fabricated in Power Semiconductors(SIPS) Proprietary trenchmos process that provides superior switching performance. These single junctiondevices are designed to switch high power with extremely low RDS(on) and areoptimized for BiCMOS fabrication. The characteristically low parasitic bodycapacity, fast switching times, low gate threshold voltage and low off-state leakagesolve the most common problems of power supply design and make theFETs ideal for applications such as DC-DC Converters, motor control, batterymanagement, automotive and medical devices.
The NVTFS5124PLWFTWG has a unique working principle that combines theoverall physical design with sophisticated modulation that provides superiorreliability and performance capability. In the circuit design, the NVTFS5124PLWFTWG relies on a series of pins in the package that control the gate potentialand channel characteristics. The gate potential is established initially when thegate of the device is applied a voltage greater than a certain threshold. Then,the gate adjusts to a level that represents the desired current flow through thedevice. This gate voltage can be adjusted manually or through a start-upcircuit. The gate voltage modulates the characteristics of the channel andmaintains the device in an off state until a certain current threshold isreached.
The modulation of the gate potential allows for the precise control over themaximum output current of the NVTFS5124PLWFTWG. The maximumoutput is at the gate potential set by the user and cannot be exceeded. Asimilarly adjustable drain-source voltage is then applied to the device toactivate the internal circuits and create the desired current flow in the channelof the device. The gate current is set to maintain the desired gate potential andto keep the device in the off state when not in use.
The main application fields for the NVTFS5124PLWFTWG are DC-DC converters,motor control, battery management, automotive and medical devices.The NVTFS5124PLWFTWG is used in applications that require a largecurrent flow with high efficiency, or require precise control over the maximumoutput current. The device enables precise current control, which is critical forapplications such as motor control and battery management. The lowparasitic body capacity and fast switching times improve the overallperformance of DC-DC converters. In addition, the low gate threshold voltageand low off-state leakage reduce power consumption and environmentalimpact.
The NVTFS5124PLWFTWG is a single junction field-effect transistor that makesuse of a combination of design and modulation to provide superior operation andreliability. The device is optimized for applications such as DC-DC converters,motor control, battery management, automotive and medical devices whereprecise current control and fast switching times are required. The devicefeatures a low parasitic body capacity, low gate threshold voltage and low off-state leakages, thereby making it the ideal choice for a wide range ofapplications.
The specific data is subject to PDF, and the above content is for reference
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