NVTFS4C13NWFTWG Allicdata Electronics
Allicdata Part #:

NVTFS4C13NWFTWG-ND

Manufacturer Part#:

NVTFS4C13NWFTWG

Price: $ 0.20
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 30V 40A U8FL
More Detail: N-Channel 30V 14A (Ta) 3W (Ta), 26W (Tc) Surface M...
DataSheet: NVTFS4C13NWFTWG datasheetNVTFS4C13NWFTWG Datasheet/PDF
Quantity: 1000
5000 +: $ 0.17635
Stock 1000Can Ship Immediately
$ 0.2
Specifications
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Package / Case: 8-PowerWDFN
Supplier Device Package: 8-WDFN (3.3x3.3)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 3W (Ta), 26W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 770pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 15.2nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 9.4 mOhm @ 30A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The NVTFS4C13NWFTWG is a single N-channel Field Effect Transistor (FET) that is highly versatile and has several applications. It is typically used in low-voltage or high-current switching applications that involve the transmission of digital or analog signals, or low-current or high-voltage voltage. This article will discuss the application field and working principle of the NVTFS4C13NWFTWG.

The working principle of the NVTFS4C13NWFTWG is based on the MOSFET (Metal Oxide Semiconductor Field Effect Transistor) technology. This technology exploits the properties of an insulated gate to control the flow of current between two terminals. In a basic FET circuit, a voltage applied between the gate and the source controls the amount of current that flows between the drain and the source. This is known as the “Threshold Voltage.” By adjusting the voltage applied between the gate and the source, the amount of current that flows between the drain and the source is controlled, allowing designers to tailor designs to specific applications.

One of the major advantages of the NVTFS4C13NWFTWG is its low gate voltage requirement and low leakage current. This is due to the thin oxide layer present in the MOSFET which allows for the efficient control of the current flow. Additionally, the small size of the NVTFS4C13NWFTWG enables the design of small and lightweight electronic systems, which is beneficial for applications such as medical equipment or hand-held instruments.

The NVTFS4C13NWFTWG is often used in switching applications, such as logic gates and DC-DC converters. It is also used in power supplies, audio amplifiers, and automotive circuits. The strong switching characteristics of the NVTFS4C13NWFTWG make it well suited for any design that requires frequent switching between two levels with minimal power loss. It is also capable of providing protection against overvoltages and electrostatic discharges, making it a popular choice in high-voltage applications.

Furthermore, the NVTFS4C13NWFTWG can also be used in control circuits. It is capable of being used to accurately control the voltage and current flow in a variety of circuits. This makes it well suited for applications such as amplifiers, motor control, current limiting devices, and temperature controllers.

The NVTFS4C13NWFTWG is an excellent choice for a wide range of applications, from low-power switching to high-current control. It provides an efficient and reliable design solution for designers who need an effective and low-cost control solution. With its wide range of features, the NVTFS4C13NWFTWG is sure to be a valuable addition to any application.

The specific data is subject to PDF, and the above content is for reference

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