NVTFS5820NLTAG Discrete Semiconductor Products |
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Allicdata Part #: | NVTFS5820NLTAGOSTR-ND |
Manufacturer Part#: |
NVTFS5820NLTAG |
Price: | $ 0.42 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 60V 37A 8WDFN |
More Detail: | N-Channel 60V 11A (Ta) 3.2W (Ta), 21W (Tc) Surface... |
DataSheet: | NVTFS5820NLTAG Datasheet/PDF |
Quantity: | 1000 |
1500 +: | $ 0.38732 |
Vgs(th) (Max) @ Id: | 2.3V @ 250µA |
Package / Case: | 8-PowerWDFN |
Supplier Device Package: | 8-WDFN (3.3x3.3) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 3.2W (Ta), 21W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1462pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 28nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 11.5 mOhm @ 8.7A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 11A (Ta) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Not For New Designs |
Packaging: | Tape & Reel (TR) |
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Transistors - FETs, MOSFETs - Single
NVTFS5820NLTAG is a Single N-channel Trench Field-Effect Transistor (FET). It is manufactured by a state-of-the-art process technology, wherein embedded XFET® N-channel MOSFET die are designed using a trench structure. The excess gate capacitance associated with planar-type MOSFETs is greatly reduced by the trench structure. This results in a device having higher efficiency and improved performance. The major characteristics of this device are: low gate charge, low On-resistance, and fast switching speed.
Application field
The NVTFS5820NLTAG is a single N-channel FET, which is suitable for various applications such as switching, audio amplifiers, DC-DC conversion, and load switches. It is also available for use in communications and consumer electronic equipment, as well as automotive and industrial systems. It is especially suitable for applications that require high-speed switching, good power efficiency, and low On-resistance.
Working principle
The working principle of the NVTFS5820NLTAG is based on the application of the electric field across a reverse biased semiconductor material. The electric field causes a “space charge” of electrons to exist in the region between the gate and the source of the transistor. When a positive voltage is applied to the gate, the electric field induces a current flow between the source and drain. This current is known as “channel current”. The gate voltage controls the channel current, and this provides basis of the switching action of the device.
The source of the NVTFS5820NLTAG is connected to the drain and to a substrate that has the same type of doping, which causes the channel resistance to remain constant. By controlling the gate voltage, the threshold voltage and the On-resistance can be varied. The On-resistance is expressed as a percentage of the channel current at a given gate voltage, and is commonly known as the Rds(on).
The device’s high gate capacitance and low Q-factor results in improved switching speed. Its low gate charge further improves the speed. It also reduces switching losses, resulting in higher power densities. The device’s resistance to Electro-Static discharge (ESD) makes it suitable for applications in the industrial sector.
Conclusion
In conclusion, the NVTFS5820NLTAG is a Single N-channel Trench FET with improved efficiency and performance. It has a low On-resistance and fast switching speed. It is suitable for use in applications that require high-speed switching and good power efficiency. Its low gate charge and high gate capacitance also provide improved switching speed. Its resistance to Electro-Static discharge (ESD) makes it suitable for applications in the industrial sector.
The specific data is subject to PDF, and the above content is for reference
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