PSMN004-60B,118 Allicdata Electronics
Allicdata Part #:

1727-5267-2-ND

Manufacturer Part#:

PSMN004-60B,118

Price: $ 1.23
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: MOSFET N-CH 60V 75A D2PAK
More Detail: N-Channel 60V 75A (Tc) 230W (Tc) Surface Mount D2P...
DataSheet: PSMN004-60B,118 datasheetPSMN004-60B,118 Datasheet/PDF
Quantity: 1000
800 +: $ 1.12239
Stock 1000Can Ship Immediately
$ 1.23
Specifications
Vgs(th) (Max) @ Id: 4V @ 1mA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 230W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 8300pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 168nC @ 10V
Series: TrenchMOS™
Rds On (Max) @ Id, Vgs: 3.6 mOhm @ 25A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The PSMN004-60B,118, commonly referred to as a N-channel MOSFET, is a device that interconnects an external power source to a power circuit. With the ability to regulate power flow at low voltage levels, these devices are highly versatile and often used in many different applications.

The MOSFET is made up of two types of semiconductor materials, n-type and p-type, which work in synergy to produce unique electrical characteristics. These materials form a channel in the MOSFET’s structure, allowing a current to flow through them in one direction. This current is regulated by an applied voltage, which triggers a series of changes to the MOSFET’s electron flow.

The main component of the MOSFET is its gate. The Gate is the control point in the MOSFET and it allows the user to adjust the current flow by controlling the voltage applied to the Gate. By doing this, the Gate allows more or less electrons to enter the channel, resulting in an increased or decreased current, respectively. Because it requires very little gate power, it can be used in extremely low-power applications such as portable electronics and to provide power to-small embedded devices.

The PSMN004-60B,118 is a n-channel MOSFET, where the n-channel refers to the type of channel used in the device. N-channel MOSFETs offer a high input impedance, meaning that the current is accurately regulated by the amount of voltage provided. This is known as the depletion mode as the electrons in the n-channel are initially depleted from the gate and require a voltage to enter.

The gate of the PSMN004-60B,118 is designed such that it can easily be driven by a voltage, and can control the current in a power circuit more accurately than other types of transistor. This is because the MOSFET has less capacitance than a bipolar transistor and requires less gate drive power. Additionally, the high input impedance of the PSMN004-60B,118, allows it to function as an open collector device, which allows outputs to be connected without sinking current.

The PSMN004-60B,118 is a designed to be used in power-control applications such as light dimming, speed control, motor control, and dc-to-dc converters. Additionally, these devices can be used in analog circuits, especially those which need voltage-level translation. Another application is in logic circuits where faster speeds are needed, due to the low capacitance and low on-resistance of the device.

In summary, the PSMN004-60B,118 is a N-channel MOSFET specifically designed to be used in various power control applications. Due to its low input impedance, it is able to accurately regulate current and is capable of using less power than other types of transistor. Additionally, it can be used as an open collector device, allowing for easily integrated outputs. As such, it is widely used in various applications from light dimming to logic circuits.

The specific data is subject to PDF, and the above content is for reference

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