Allicdata Part #: | 1727-1857-2-ND |
Manufacturer Part#: |
PSMN1R4-40YLDX |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | MOSFET N-CH 40V 100A LFPAK |
More Detail: | N-Channel 40V 100A (Tc) 238W (Tc) Surface Mount LF... |
DataSheet: | PSMN1R4-40YLDX Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 2.2V @ 1mA |
Package / Case: | SC-100, SOT-669, 4-LFPAK |
Supplier Device Package: | LFPAK56, Power-SO8 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 238W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 6661pF @ 20V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 96nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 1.4 mOhm @ 25A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 100A (Tc) |
Drain to Source Voltage (Vdss): | 40V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The PSMN1R4-40YLDX is a single N-Channel, Depletion Mode Metal–Oxide–Semiconductor Field-Effect Transistor (MOSFET) from Infineon. As a MOSFET (Metal Oxide Semiconductor Field Effect Transistor) driver, it creates a gate between the source and drain of its semiconductor to control the impedance of the path. It is found in a variety of electronics applications including radio frequency (RF) and switching power supplies.
Basically, a MOSFET is a voltage controlled semi-conductor device which helps a designer to control the voltage applied to a load with a small input signal. Just like a transistor, it contains a source, drain and gate terminal. The MOSFETs are used in both digital and analog circuits. The terminals of the MOSFETs used in analog circuits are connected in an arrangement similar to that of a field effect transistor (FET).
In this particular case, PSMN1R4-40YLDX is a single N-Channel, Depletion Mode MOSFET. This type of MOSFET can be used in low voltage and high current applications. Its features and specifications make it ideal for switching and power management applications. Here are some of the features of the PSMN1R4-40YLDX:
- Voltage: -40V to 400V
- Current: 4.2A
- Low On-Resistance
- Thermal Shutdown
- High Frequency Switching
- High Gain
The PSMN1R4-40YLDX works by allowing current flow through the drain and source terminals, depending on the voltage applied to the gate. This voltage acts as a switch between the source and the drain and thus controls the current flow in the drain terminal. The resistance of the gate is extremely low, which allows very high current to be switched.
The PSMN1R4-40YLDX has numerous applications. It can be used in all kinds of switch circuits for controlling the current flow in a circuit. Also, it can be used in high power amplifiers and transistors to control the amplification of signals. Furthermore, it can be used in power modules and converters. Finally, it can be used in all kinds of relay circuits, including Automotive Relay Circuits and Industrial Relay Circuits.
The PSMN1R4-40YLDX is a very versatile part and its features, specifications and application make it ideal for a wide variety of applications. This MOSFET is fast switching and has low on-resistance, making it ideal for high frequency switching applications. Its thermal shutdown and high gain features make it suitable for applications where extreme temperatures and high current demand are present. Additionally, its small size makes it suitable for tight PCB layouts and other electronic devices that require miniaturized MOSFET components.
The specific data is subject to PDF, and the above content is for reference
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