PSMN1R6-60CLJ Allicdata Electronics
Allicdata Part #:

PSMN1R6-60CLJ-ND

Manufacturer Part#:

PSMN1R6-60CLJ

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: MOSFET N-CH 60V D2PAK
More Detail: MOSFET N-CH 60V D2PAK
DataSheet: PSMN1R6-60CLJ datasheetPSMN1R6-60CLJ Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
FET Type: --
Technology: --
Current - Continuous Drain (Id) @ 25°C: --
Rds On (Max) @ Id, Vgs: --
Vgs(th) (Max) @ Id: --
FET Feature: --
Power Dissipation (Max): --
Operating Temperature: --
Mounting Type: --
Supplier Device Package: --
Package / Case: --
Description

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The PSMN1R6-60CLJ is a fully-qualified N-Channel Enhancement principle MOSFET which is compliant to RoHS (Restriction of Hazardous Substances) Directive. It is a suitable choice for automated assembly and features reliable electrostatic discharge protection, low on-state resistance, fast switching capability and low input capacitance. Built with a small-footprint for minimal board space, and exhibiting high frequency performance, the PSMN1R6-60CLJ offers a wide range of automation and ITE (Information Technology Equipment) applications.

A metal–oxide–semiconductor field-effect transistor (MOSFET), also known as a metal–oxide–silicon (MOS) transistor, is a semiconductor device used for amplifying and switching electronic signals. These devices are heavily utilized in today’s advancing electronics industries because of their low power consumption, small size, and many operating advantages. As a result, MOSFETs are constantly being upgraded and improved to come up with new and better versions of the same device.

MOSFETs belong to the family of transistors designed using the Field Effect principle, where the transistor action is triggered by an electric field. A single MOSFET consists of a source region to which the current is supplied, a drain region at which the current exits, and a gate region which controls (i.e. turns on and off) the current between source & drain by means of an applied voltage. Depending upon the MOSFET type and model, the drain and source could be interchangeable.

The PSMN1R6-60ClJ is an N-Channel MOSFET which is mainly used for switching applications. It can switch on and off whenever a desired potential difference is applied to the Gate. When the applied voltage exceeds the specified threshold voltage, the MOSFET begins to conduct current across the source and drain region. As a result, N-Channel MOSFET are popularly used for low power switching applications, as it is fast, efficient and saves power.

This MOSFET has a low on-state resistance, which means that it has very low power dissipation and minimized heat generation during conduction. The intricate structure of its semiconductor-material interactions helps it to provide wide range of automation solutions. Additionally, its small size and low input capacitance leads to fast switching performance and hence it is one of the most preferred switching transistors in the electrical engineering industry.

The PSMN1R6-60ClJ is now being actively used in the ITE, Automotive, Telecommunications and Military applications. Its applications range from switching power supplies, DC/DC; converters, IGBT/MOSFET gate drives and H-Bridge circuits, switching/semi-proximity/gate-drive circuits, microprocessor/microcontroller interface circuits to power MOSFET and IGBT drivers for high power switching applications. Given that it has an excellent combination of power dissipation and a high frequency, it has become a more preferred MOSFET than many of its contemporaries.

In summary, the PSMN1R6-60ClJ is of a low-on state resistance, high frequency, excellent power dissipation and small size. It is compliant to RoHS (Restriction of Hazardous Substances) Directive, and is suitable for automated assembly. It thus can be used in Automotive, Telecommunications, ITE and Military applications mainly for low power switching applications.

The specific data is subject to PDF, and the above content is for reference

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