Allicdata Part #: | 1727-2590-2-ND |
Manufacturer Part#: |
PSMN014-80YLX |
Price: | $ 0.25 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | MOSFET N-CH 80V LFPAK56 |
More Detail: | N-Channel 80V 62A (Tc) 147W (Tc) Surface Mount LFP... |
DataSheet: | PSMN014-80YLX Datasheet/PDF |
Quantity: | 1500 |
1500 +: | $ 0.22059 |
Vgs(th) (Max) @ Id: | 2.1V @ 1mA |
Package / Case: | SC-100, SOT-669, 4-LFPAK |
Supplier Device Package: | LFPAK56, Power-SO8 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 147W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 4640pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 28.9nC @ 5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 14 mOhm @ 15A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 62A (Tc) |
Drain to Source Voltage (Vdss): | 80V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The PSMN014-80YLX is a type of field effect transistor (FET). It is a type of metal-oxide-semiconductor field-effect transistor (MOSFET), specifically a N-Channel MOSFET designed for use in switching applications. It is a single socket MOSFET, meaning it has one gate terminal and one drain terminal.
The PSMN014-80YLX MOSFET is a very versatile device, used in a wide variety of applications. It is mainly used in power control applications such as motor control, voltage regulation, speed control, and switching applications. It is also used in audio amplifiers, home appliances, and in other industrial applications.
Application Field
The PSMN014-80YLX MOSFET is used extensively in power control applications. It can be used for motor control, speed control, voltage regulation, and switching applications. It is also used in audio amplifiers, robotics, home appliances, and other industrial applications.
Working Principle
The working principle of a PSMN014-80YLX MOSFET is based on the principle of MOSFETs. In a MOSFET, the gate terminal controls the current flow between the source and drain terminals. The PSMN014-80YLX MOSFET has a P-Channel design, meaning it has a positively charged gate that control the current flow. The gate terminal is composed of a metal layer and an insulated gate.
When a positive voltage is applied to the gate terminal, a positive electric field is created which attracts electrons from the source terminal to the drain terminal. This creates a current flow from the source to the drain terminal. When the positive voltage is removed, the current flow stops and the transistor is said to be "off".
The PSMN014-80YLX MOSFET also has a low "on" resistance, meaning it has a low voltage drop when conducting current. This allows it to operate at high frequencies and be used in switching applications.
The PSMN014-80YLX MOSFET is also designed to be resistant to electrostatic discharge (ESD). To protect the transistor against ESD, it has a built-in gate-to-source capacitor.
Conclusion
The PSMN014-80YLX is a type of field effect transistor (FET) and is a type of metal-oxide-semiconductor field-effect transistor (MOSFET). It is a single socket MOSFET, meaning it has one gate terminal and one drain terminal. It is mainly used for power control applications such as motor control, voltage regulation, speed control, and switching applications. The working principle of the PSMN014-80YLX MOSFET is based on the principle of MOSFETs. The PSMN014-80YLX MOSFET has a P-Channel design, meaning it has a positively charged gate that controls the current flow. It is also designed to be resistant to electrostatic discharge (ESD).
The specific data is subject to PDF, and the above content is for reference
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