PSMN014-80YLX Allicdata Electronics
Allicdata Part #:

1727-2590-2-ND

Manufacturer Part#:

PSMN014-80YLX

Price: $ 0.25
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: MOSFET N-CH 80V LFPAK56
More Detail: N-Channel 80V 62A (Tc) 147W (Tc) Surface Mount LFP...
DataSheet: PSMN014-80YLX datasheetPSMN014-80YLX Datasheet/PDF
Quantity: 1500
1500 +: $ 0.22059
Stock 1500Can Ship Immediately
$ 0.25
Specifications
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Package / Case: SC-100, SOT-669, 4-LFPAK
Supplier Device Package: LFPAK56, Power-SO8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 147W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 4640pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 28.9nC @ 5V
Series: --
Rds On (Max) @ Id, Vgs: 14 mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
Drain to Source Voltage (Vdss): 80V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The PSMN014-80YLX is a type of field effect transistor (FET). It is a type of metal-oxide-semiconductor field-effect transistor (MOSFET), specifically a N-Channel MOSFET designed for use in switching applications. It is a single socket MOSFET, meaning it has one gate terminal and one drain terminal.

The PSMN014-80YLX MOSFET is a very versatile device, used in a wide variety of applications. It is mainly used in power control applications such as motor control, voltage regulation, speed control, and switching applications. It is also used in audio amplifiers, home appliances, and in other industrial applications.

Application Field

The PSMN014-80YLX MOSFET is used extensively in power control applications. It can be used for motor control, speed control, voltage regulation, and switching applications. It is also used in audio amplifiers, robotics, home appliances, and other industrial applications.

Working Principle

The working principle of a PSMN014-80YLX MOSFET is based on the principle of MOSFETs. In a MOSFET, the gate terminal controls the current flow between the source and drain terminals. The PSMN014-80YLX MOSFET has a P-Channel design, meaning it has a positively charged gate that control the current flow. The gate terminal is composed of a metal layer and an insulated gate.

When a positive voltage is applied to the gate terminal, a positive electric field is created which attracts electrons from the source terminal to the drain terminal. This creates a current flow from the source to the drain terminal. When the positive voltage is removed, the current flow stops and the transistor is said to be "off".

The PSMN014-80YLX MOSFET also has a low "on" resistance, meaning it has a low voltage drop when conducting current. This allows it to operate at high frequencies and be used in switching applications.

The PSMN014-80YLX MOSFET is also designed to be resistant to electrostatic discharge (ESD). To protect the transistor against ESD, it has a built-in gate-to-source capacitor.

Conclusion

The PSMN014-80YLX is a type of field effect transistor (FET) and is a type of metal-oxide-semiconductor field-effect transistor (MOSFET). It is a single socket MOSFET, meaning it has one gate terminal and one drain terminal. It is mainly used for power control applications such as motor control, voltage regulation, speed control, and switching applications. The working principle of the PSMN014-80YLX MOSFET is based on the principle of MOSFETs. The PSMN014-80YLX MOSFET has a P-Channel design, meaning it has a positively charged gate that controls the current flow. It is also designed to be resistant to electrostatic discharge (ESD).

The specific data is subject to PDF, and the above content is for reference

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