PSMN6R3-120PS

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The PSMN6R3-120PS is a surface mount insulated field effect transistor (FET) offering a wide range of applications.

The PSMN6R3-120PS is a single voltage N-channel enhancement mode MOSFET, offering a wide range of applications. This MOSFET can be used to switch high voltage and high current applications. Furthermore, the PSMN6R3-120PS has low RDS(on) and fast switching times, making it ideal for high power switching applications. The PSMN6R3-120PS is also suitable for high current output devices such as DC motor drivers, solenoid drivers, and power amplifiers.

The working principle of the PSMN6R3-120PS is based on an insulated gate field effect transistor (IGFET). An IGFET is a field effect transistor controlled by an insulated gate (IG). This insulated gate provides a high electrical breakdown strength, allowing it to switch high voltages and high currents. The PSMN6R3-120PS utilizes an N-channel IGFET, allowing current to flow from the drain to the source when a proper gate voltage is applied. If the gate voltage exceeds and remains beyond the specified gate threshold voltage, the device will be fully on and the drain current will be maximized.

The PSMN6R3-120PS is designed for drain-source operation voltages up to 60V and the on-state drain current can be up to 120A. This device also has a low gate charge (Qgs) of 6.3 nC, low drain to source on-state resistance (Rds (on)) of 0.0265 ohm, and fast switching times of 50ns typical. In order to obtain the aforementioned drain current and voltage ratings, the PSMN6R3-120PS must be operated with a temperature range of between -55°C and + 175°C.

The PSMN6R3-120PS has a range of applications including DC motor drivers, solenoid drivers, and power amplifiers due to its low Rds(on), fast switching times, and high power capabilities. In addition, this device is ideal for a variety of other power switching applications, such as bridges, power supplies, and high speed switching circuits, as well as for applications in the automotive, industrial, and communications markets.

In conclusion, the PSMN6R3-120PS is a single voltage N-channel enhancement mode MOSFET, offering a wide range of applications. This MOSFET is suitable for high voltage and high current applications and can be used for bridges, DC motor drivers, solenoid drivers, power supplies, power amplifiers, and a variety of other power switching applications. The PSMN6R3-120PS has a low Rds(on), fast switching times, and high power capabilities, making it ideal for these types of applications.

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