Allicdata Part #: | 1727-6497-2-ND |
Manufacturer Part#: |
PSMN6R0-25YLB,115 |
Price: | $ 0.20 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | MOSFET N-CH 25V LFPAK |
More Detail: | N-Channel 25V 73A (Tc) 58W (Tc) Surface Mount LFPA... |
DataSheet: | PSMN6R0-25YLB,115 Datasheet/PDF |
Quantity: | 1500 |
1500 +: | $ 0.17958 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 25V |
Current - Continuous Drain (Id) @ 25°C: | 73A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 6.1 mOhm @ 20A, 10V |
Vgs(th) (Max) @ Id: | 1.95V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: | 19.3nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 1099pF @ 12V |
FET Feature: | -- |
Power Dissipation (Max): | 58W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | LFPAK56, Power-SO8 |
Package / Case: | SC-100, SOT-669, 4-LFPAK |
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PSMN6R0-25YLB,115 is a single power MOSFET (metal-oxide-semiconductor field-effect transistor) produced by Infineon Technologies, an American electronics and semiconductor manufacturer. The device is used in applications which require a high level of power efficiency and fast switching, such as automotive power supplies, lighting, and industrial automation.
A MOSFET is a type of transistor which uses an electric field to control the flow of current through the device. It is the most commonly used type of transistor in modern electronics due to its efficient performance and low power consumption. The power MOSFET works in a similar way to a standard MOSFET, but has an increased current handling capacity. This makes it ideal for high-power applications, such as those mentioned above.
The PSMN6R0-25YLB,115 is a N-channel power MOSFET with a drain-source voltage of 25V. It has an on-state resistance of 0.6ohm and a maximum junction temperature of 175°C. It can handle a continuous drain current of 51A and a maximum drain-source voltage of 45V. The device has an integrated reverse-block feature, which prevents damaging current in the opposite direction. It is also protected against electrostatic discharge (ESD) up to 2kV.
In terms of performance, the PSMN6R0-25YLB,115 delivers excellent switching speeds, with a minimum risetime of 10ns, a maximum falltime of 5ns and a maximum on-state resistance of 0.6ohm. It has an moderate power dissipation of 1.25W and a maximum junction temperature of 175°C. This makes it suitable for applications which require high levels of power efficiency.
The PSMN6R0-25YLB,115 is an excellent choice for automotive, industrial and lighting applications. Its impressive current handling capacity and fast switching speeds make it ideal for high-power applications which require a high level of power efficiency and fast response times. It is also protected against electrostatic discharge and offers integrated reverse-block protection, meaning it can be used in a variety of high-power applications.
The specific data is subject to PDF, and the above content is for reference
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