PSMN6R0-25YLB,115 Allicdata Electronics
Allicdata Part #:

1727-6497-2-ND

Manufacturer Part#:

PSMN6R0-25YLB,115

Price: $ 0.20
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: MOSFET N-CH 25V LFPAK
More Detail: N-Channel 25V 73A (Tc) 58W (Tc) Surface Mount LFPA...
DataSheet: PSMN6R0-25YLB,115 datasheetPSMN6R0-25YLB,115 Datasheet/PDF
Quantity: 1500
1500 +: $ 0.17958
Stock 1500Can Ship Immediately
$ 0.2
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 73A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 6.1 mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 1.95V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 19.3nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1099pF @ 12V
FET Feature: --
Power Dissipation (Max): 58W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: LFPAK56, Power-SO8
Package / Case: SC-100, SOT-669, 4-LFPAK
Description

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PSMN6R0-25YLB,115 is a single power MOSFET (metal-oxide-semiconductor field-effect transistor) produced by Infineon Technologies, an American electronics and semiconductor manufacturer. The device is used in applications which require a high level of power efficiency and fast switching, such as automotive power supplies, lighting, and industrial automation.

A MOSFET is a type of transistor which uses an electric field to control the flow of current through the device. It is the most commonly used type of transistor in modern electronics due to its efficient performance and low power consumption. The power MOSFET works in a similar way to a standard MOSFET, but has an increased current handling capacity. This makes it ideal for high-power applications, such as those mentioned above.

The PSMN6R0-25YLB,115 is a N-channel power MOSFET with a drain-source voltage of 25V. It has an on-state resistance of 0.6ohm and a maximum junction temperature of 175°C. It can handle a continuous drain current of 51A and a maximum drain-source voltage of 45V. The device has an integrated reverse-block feature, which prevents damaging current in the opposite direction. It is also protected against electrostatic discharge (ESD) up to 2kV.

In terms of performance, the PSMN6R0-25YLB,115 delivers excellent switching speeds, with a minimum risetime of 10ns, a maximum falltime of 5ns and a maximum on-state resistance of 0.6ohm. It has an moderate power dissipation of 1.25W and a maximum junction temperature of 175°C. This makes it suitable for applications which require high levels of power efficiency.

The PSMN6R0-25YLB,115 is an excellent choice for automotive, industrial and lighting applications. Its impressive current handling capacity and fast switching speeds make it ideal for high-power applications which require a high level of power efficiency and fast response times. It is also protected against electrostatic discharge and offers integrated reverse-block protection, meaning it can be used in a variety of high-power applications.

The specific data is subject to PDF, and the above content is for reference

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