PSMN5R0-80BS,118

Vgs(th) (Max) @ Id:	4V @ 1mA
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:	D2PAK
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	270W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	6793pF @ 40V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	101nC @ 10V
Series:	--
Rds On (Max) @ Id, Vgs:	5.1 mOhm @ 25A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	100A (Tc)
Drain to Source Voltage (Vdss):	80V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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The PSMN5R0-80BS,118 is a N-Channel enhancement mode transistor that utilizes a Metal Oxide Semiconductor Field Effect (MOSFET). This device comes in a 0.198 square inch, 7 pin through-hole, 1 amp rated package and includes an integrated Schottky diode.This transistor has a VDS (Drain-Source Voltage) rating of 80V, a VGS (Gate-Source Voltage) rating of 8V and a RDS(on) (Drain-Source On-State Resistance) rating of 0.018Ω. It also has a VGS rise of 1.73V and can handle powers up to 75W. The PSMN5R0-80BS,118 is a good choice for applications requiring low heat dissipation and minimal size.The operation of this device is based on the principle of a field effect transistor. When a negative voltage is applied to the gate, the electric field inside creates a region that depletes the majority charge carriers that exist near the drain, generating an inversion layer in the shape of a thin “wall” around the drain source. This thin “wall” restricts the current flow to the source and prevents it from reaching the path to the device’s source. This is why when the gate voltage increases, the voltage between the drain and the source falls, resulting in a drain-source current that is proportional to the gate voltage. Therefore, this MOSFET is classified as P-Channel enhancement mode.This MOSFET can be used in a variety of applications such as switching and amplification. It is used in amplifiers because of its low resistance level and high transconductance; its ability to handle large amounts of current and voltage; and its ability to switch signals quickly. It is also used in power supplies and provides efficient, low-noise operation, as well as low input and output capacitance. It may also be used as a switch in multiple applications including the control of light, the control of motors, magnetic fields, and the control of relays.When it comes to reliability, the PSMN5R0-80BS,118 has an exceptional record because of its low power dissipation, low leakage current, and its robust design. Manufacturers claim that this MOSFET can be used for up to 500,000 switching cycles without significant changes in performance. In addition to this, the device has an excellent thermal resistance rating and its current carrying capacity can be increased above its rated level.In conclusion, the PSMN5R0-80BS,118 is an efficient and reliable N-Channel enhancement mode transistor. It is suitable for a variety of applications that require low power dissipation and minimal size, such as switching and amplification. Furthermore, its operation is based on the principle of a field effect transistor and its reliability is exceptional, allowing it to be used up to 500,000 switching cycles without significant changes in performance.

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