PSMN015-110P,127

PSMN015-110P,127 is a N-channel 115V, 0.0015 Ohm integrated circuit (IC) resistor produced by NXP Semiconductors. It is a part of their PSMN Series of MOSFETs that come in a SO-8 (5.5mmx8mm) surface mount package. This IC is designed for low gate charge (Qg) and low thermal resistance in order to reduce overall system power consumption and optimize total power efficiency.

The PSMN015-110P,127 can be used in a variety of applications where low FOM (Figure of Merit) is desired. This IC is designed for high speed switching applications, allowing for voltage and current flows of up to 115V and 5.5A, respectively. An important feature of this IC is its superior RDS(on) of 0.0015 Ohm, at a maximum operating temperature of +175°C. This makes the PSMN015-110P,127 well-suited for applications where low FOM is desired and significant power saving is to be achieved.

The PSMN015-110P,127 can be used in applications such as low voltage DC-DC converters, on-board power management of mobile and consumer product, LED lighting and displays, and motor control. Its low FOM will allow for an increase in the efficiency of these applications, while its low RDS(on) will help to reduce power dissipation.

The PSMN015-110P,127 is a type of MOSFET (Metal-Oxide Semiconductor Field Effect Transistor). A MOSFET is a voltage-controlled device with three terminals, gate (G), drain (D), and source (S). The structure of the PSMN015-110P,127 is fabricated on an N-type silicon substrate. The gate is an insulated gate within the substrate and is separated from the source and drain by a thin insulating layer. The gate and drain are electrically connected by a conducting path called the channel which is formed when voltage is applied to the gate.

When the gate voltage is increased, the depletion region at the gate-source junction expands, allowing a larger conduction path between the drain and source. This increase in current between the drain and source causes the MOSFET to enter an "ON" state and electrical current will flow between the source and drain. When the gate voltage is decreased, the depletion region shrinks again and the MOSFET return to its "OFF" state. By modulating the source and gate voltages, the current through the drain-source path is regulated.

The PSMN015-110P,127 has an advanced cell design which reduces the capacitance between the drain and gate, allowing for increased switching performance. It also has a low channel resistance (RDS(on)) and a low gate charge (Qg). This combination provides for better electrical characteristics for the device and improved overall performance.

The PSMN015-110P,127 is an advanced N-channel MOSFET IC produced by NXP Semiconductors. It is best suited for high speed switching applications with low FOM and low RDS(on). It has a maximum operating temperature of +175°C, a maximum operating voltage of 115V and a maximum current of 5.5A. Its advanced cell design allows for improved switching performance with lower capacitance and lower gate charge. The PSMN015-110P,127 is a great solution for applications which require higher speed switching with lower losses and improved power efficiency.

The specific data is subject to PDF, and the above content is for reference