PSMN7R8-100PSEQ

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PSMN7R8-100PSEQ is a semiconductor component designed and manufactured by NXP Semiconductors related to Transistors - FETs, MOSFETs - Single. It is a 100-Volt N‑channel Power MOSFET which has been specifically designed as low RDS(on) and low QG. This component is primarily intended for applications requiring a level of performance between a standard power MOSFET and an IGBT.

The PSMN7R8-100PSEQ uses the latest advancements in MOSFET technology, which includes a much narrower channel length and the introduction of high-performance super junction structures. The device achieves extremely high performance levels on both RDS(on) and QG. Its fast switching times allow for increased system-level efficiency and its optimal thermal management increases device lifetime. The component is well suited for applications such as servo drives, motor control and inverters which require fast switching times combined with low power consumption.

The PSMN7R8-100PSEQ is constructed with a D-S-G structure in which the Drain is connected to the Source and the Gate is connected to the drain. This structure allows for a very small size and low parasitic capacitance. The device operates using a N-channel MOSFET in which a potential well forms across the channel. This potential well is created by applying a positive voltage to the gate while the source is grounded. This potential well attracts majority carriers which are electrons. When a positive voltage is applied to the drain, the electrons are drawn towards the drain and this creates a conductive path between the drain and the source. The current flowing through the device is determined by the amount of voltage applied to the gate.

The working principle of PSMN7R8-100PSEQ can be summarized as follows: the voltage applied to the gate creates an electrostatic field which attracts electrons from the source into the channel. The source and drain are then connected in a circuit and the current flow is determined by the amount of voltage applied to the gate. The device also has a reverse blocking ability in which the flow of current is blocked when a voltage of the opposite polarity is applied to the drain. This allows for improved power management and system-level efficiency.

The PSMN7R8-100PSEQ is widely used in the automotive and industrial sectors. It offers excellent performance, low cost and low power consumption, which makes it ideal for applications such as motor control, servo drives and inverters. The small size and low parasitic capacitance make it suitable for high-frequency applications. It also has improved thermal management, which increases device lifetime.

In conclusion, the PSMN7R8-100PSEQ is an advanced, cost-efficient N-channel MOSFET designed and manufactured by NXP Semiconductors specifically designed for low RDS(on) and low QG and applications such as servo drives, motor control and inverters. This component uses the latest advancements in MOSFET technology and offers excellent performance and low power consumption. It is also suitable for high-frequency and automotive applications due to its small size and low parasitic capacitance.

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