PSMN017-80BS,118

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The PSMN017-80BS,118 is one type of MOSFET (Metal Oxide Semiconductor Field Effect Transistor) which is a type of semiconductor device used as an amplifier, a switch or a signal regulator. This MOSFET is usually used in any application where fast switching, linear amplification, temperature-dependent current control and high-sensitivity signal control is required.

MOSFETs are basically three terminal devices with an input, an output and a gate. The input and output of a MOSFET are the source and drain, and the gate is used to control the flow. The PSMN017-80BS,118 is a single gate MOSFET that operates by channel enhancement. This means that when a gate voltage is applied to the MOSFET, the channel region between the source and the drain is enhanced to allow more current flow between them.

The PSMN017-80BS,118 is a p-channel enhancement type MOSFET. This means it has voltage-dependent current, channel enhancement and drain isolation. This MOSFET can help reduce energy consumption and heat dissipation due to its low gate capacitance. It also has a low on-state resistance and a high saturation drain current.

This MOSFET is designed to be used in power applications such as motor control, switching power supplies, mobile phones and laptop computers. It is also ideal for use in hot-swapping circuit applications. This MOSFET has a nominal drain current of 1.8A and a maximum drain current of 4A. Moreover, its breakdown voltage is between 32V and 58V.

To use the PSMN017-80BS,118 in an application, the chip should be connected with a printed circuit board. The board should have a ground plane and a fan-out pattern that has a 2.5V logic threshold voltage. The gate voltage should be connected to the source, and the drain should be connected to the load. The MOSFET can then be operated by applying a voltage between the source and the gate terminals.

The PSMN017-80BS,118 is a powerful and efficient MOSFET which is reliable and durable. It is easy to use, and it provides excellent current control, low power loss and fast switching. This makes it the ideal MOSFET for any application where fast switching, linear amplification, temperature-dependent current control and high-sensitivity signal control is needed.

The specific data is subject to PDF, and the above content is for reference