PSMN5R6-100YSFQ Discrete Semiconductor Products

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The PSMN5R6-100YSFQ is a n-channel enhancement mode field effect transistor (FET). Compared to bipolar transistors, FETs have higher input impedance and lower power consumption, making them well-suited for use in low power and high frequency applications. The PSMN5R6-100YSFQ has a maximum drain current of 0.72A, a maximum drain-source on-state voltage of 30V, and a maximum drain-source off-state voltage of 30V.

The PSMN5R6-100YSFQ is a metal-oxide-semiconductor FET (MOSFET). It is a type of FET with a gate electrode between the source and drain, allowing the FET to be controlled by the voltage of the gate terminal. The gate electrode is typically made from polysilicon and metal, and the metal-oxide insulator between the gate electrode and the substrate provides insulation for the gate terminal.

Most applications for the PSMN5R6-100YSFQ take advantage of its low switching time and low power consumption. Common uses include motor control, amplifier circuits, power supplies, robotics, and communications. For example, in power supplies, the PSMN5R6-100YSFQ can be used as a switch to control the voltage and current of an AC power source, making it ideal for use in high efficiency and low power systems.

The working principle of the PSMN5R6-100YSFQ is based on voltage control. When the voltage at the gate terminal is higher than the source-drain voltage, a conducting channel is formed between source and drain, turning on the FET and allowing current to flow. Conversely, when the source-drain voltage is higher than the voltage at the gate terminal, the conducting channel is blocked, and the FET is off. This principle is the basis of FET operation, allowing the FET to be actuated by changing the voltage of the gate terminal.

In addition to the low power consumption and high switching speed of the PSMN5R6-100YSFQ, it is also known for its excellent input impedance and high breakdown voltage. Its input impedance makes it highly resistant to interference from external signals, and its high breakdown voltage means it can safely handle higher voltages. Thus, the PSMN5R6-100YSFQ makes an excellent choice for a wide range of applications.

In summary, the PSMN5R6-100YSFQ is a n-channel MOSFET with a maximum drain current of 0.72A, a maximum drain-source on-state voltage of 30V, and a maximum drain-source off-state voltage of 30V. This transistor is well-suited for low power and high frequency applications thanks to its low switching time, high input impedance, and low power consumption. It is commonly used in motor control, amplifier circuits, power supplies, robotics, and communications. The working principle of the PSMN5R6-100YSFQ is based on voltage control, making it easy to control and actuate using the voltage of the gate terminal.

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