PSMN070-200P,127

PSMN070-200P,127 Application Field and Working Principle

PSMN070-200P,127 is a Power Block Package, N-channel MOSFET with low on-resistance, high breakdown voltage and high avalanche resistance. It has a number of applications including level-shifting between different voltages, large signal switching, signal amplifier and analog signal conditioning. It is mainly used for low power designs and its uses range from high speed signal roads to power management.

As a single-gate MOSFET, the V_DS is equal to the supply voltage value. The V_GS is the gate-source voltage applied to the transistor and the I_D is the drain-source current. The principle of operation of PSMN070-200P,127 is based on the application of a voltage held between the gate terminal and the source terminal of the MOSFET. This voltage creates an electric field that affects the semiconductor channel underneath the gate terminal. When the drain-source current is applied and the current also causes a depletion zone in the channel. This zone expands to allow current flow through the drain. As the voltage is increased, the field in the depletion zone increases, and with it the resistance to current flow.

In order to obtain optimal results from the PSMN070-200P,127, it is recommended that the current flow through the device is kept as low as possible. As the current is increased, the drain-source voltage drop and the power dissipation in the device also increases. The voltage drop is also amplified by the presence of capacitance within the circuit as this causes the device to operate at lower power levels for longer periods of time.

The PSMN070-200P,127 is rated for a maximum power dissipation of 670mW, meaning that it should not be used to power circuits drawing more than this amount. Furthermore, care must be taken to ensure that the device is operated within its specified voltage and temperature limits. Voltage limits range between -50V to +100V while temperature limits are ≤175°C. Unless these limits are observed, the device may be damaged as a result.

Finally, the source-drain resistance of the PSMN070-200P,127 is specified in the range of 400Ω to 600Ω depending on the drain-source voltage applied and the current flowing through the device. It is important to take this value into account when designing the circuit and to ensure that the power dissipation does not exceed the specified limits.

In conclusion, the PSMN070-200P,127 is a single-gate MOSFET, providing high voltage and current isolation in power designs and operates using the principle of a voltage held between the gate and source terminals, creating an electric field. Care must be taken to adhere to the specified voltage and temperature limits to ensure that the device is not damaged. Furthermore, the source-drain resistance of the device must be taken into account when designing the circuit.