Allicdata Part #: | 568-4687-2-ND |
Manufacturer Part#: |
PSMN9R0-30YL,115 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | MOSFET N-CH 30V 61A LFPAK |
More Detail: | N-Channel 30V 61A (Tc) 46W (Tc) Surface Mount LFPA... |
DataSheet: | PSMN9R0-30YL,115 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 2.15V @ 1mA |
Package / Case: | SC-100, SOT-669, 4-LFPAK |
Supplier Device Package: | LFPAK56, Power-SO8 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 46W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1006pF @ 12V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 17.8nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 8 mOhm @ 15A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 61A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The PSMN9R0-30YL,115 is a single, N-channel, logic level enhancement mode MOSFET, which is capable of withstanding both high voltages and large currents. It is a monolithic device consisting of a source, drain and gate electrodes as key components of its structure. This device can operate over a wide temperature range and has a superior immunity against ESD.
The PSMN9R0-30YL,115 has a variety of applications in electrical and electronics industry. It can be used as a switch, amplifier, voltage and current regulator, variable resistor and line driver. It is an ideal device for use in high frequency applications like wireless communication systems and computer networks. It can also be used in power electronic applications such as power converters and power controllers. Its wide range of applications and superior performance makes it an ideal choice for many electronic products.
The working principle of the PSMN9R0-30YL,115 MOSFET is based on the transistor effect. The transistor effect is the process of controlling current flow between a source and drain electrodes. The source and the drain are connected with the gate. When a positive voltage is applied to the gate, it attracts electrons from the channel, which creates a channel of electrons between source and drain electrodes. This in turn increases the current flow between them. It also reduces the voltage needed to keep the current flowing across the channel. When the voltage applied to the gate is negative, it repels the electrons, reducing the current flow in the channel.
The PSMN9R0-30YL,115 MOSFET provides very low on-resistance and high breakdown voltage. Its superior characteristics make it suitable for use in a wide range of electronic products. Its low on-resistance makes it ideal for use in applications such as motor control, DC-DC converters and lighting control. Its high breakdown voltage makes it suitable for use in the automotive industry for controlling power circuits. It has been designed for use in low voltage applications.
The PSMN9R0-30YL,115 MOSFET is a very versatile device and can be used in a wide range of applications. It provides superior performance and reliability when used in high frequency applications, making it an excellent choice for these applications. Its superior design also makes it an ideal choice for use in power electronic applications where high voltage and large currents are needed.
In conclusion, the PSMN9R0-30YL,115 MOSFET is a powerful device with a wide range of applications. Its superior characteristics make it well-suited for use in a wide range of electronic products. It is an ideal choice for use in high frequency applications and is also a good choice for power electronic applications. Therefore, the PSMN9R0-30YL,115 MOSFET is an excellent choice for many different applications.
The specific data is subject to PDF, and the above content is for reference
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