Allicdata Part #: | 568-5597-2-ND |
Manufacturer Part#: |
PSMN9R0-30LL,115 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | MOSFET N-CH 30V QFN3333 |
More Detail: | N-Channel 30V 21A (Tc) 50W (Tc) Surface Mount 8-DF... |
DataSheet: | PSMN9R0-30LL,115 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 2.15V @ 1mA |
Package / Case: | 8-VDFN Exposed Pad |
Supplier Device Package: | 8-DFN3333 (3.3x3.3) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 50W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1193pF @ 15V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 20.6nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 9 mOhm @ 5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 21A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The transistor style of PSMN9R0-30LL,115 is a single Field-Effect Transistor (FET) or MOSFET. It features one gate (control) terminal and two source/drain terminals that serve as the current pathways from the source (or low voltage end) to the drain (or high voltage end).
FETs have lower input capacitance, faster switching, and lower power requirements than the BJTs (bipolar junction transistors). Also, their characteristics are not as easily affected by variations in temperature as other types of transistors. In general, FETs are larger in size than BJTs, and they tend to be more expensive.
The PSMN9R0-30LL,115 transistor is usually used in low-power applications, such as control and logic circuits that require switching power. Applications such as logic circuits, amplifiers, oscillators, and digital logic circuits are ideal uses for this transistor. Specific applications include contactor controls, motor controls, switch gear, and automotive electronics.
The working principle of the PSMN9R0-30LL,115 transistor is based on the field-effect. In this principle, an electric field is used in order to control the electrical properties of the transistor. When a voltage is applied to the gate (control) terminal, a field is created that affects the channel between the source and drain. This field-effect can be used to regulate the current flow between the source and drain. When the voltage changes, the transistor either opens or closes, thus allowing or blocking the current from the source to the drain.
The PSMN9R0-30LL,115 offers a number of benefits over other transistors, such as a higher breakdown voltage, higher current handling capacity, and faster switching. It is able to handle high currents with low impedances and offers excellent temperature performance. Furthermore, it is designed to be compatible with a variety of logic gate circuits and is also very robust and reliable.
In conclusion, the PSMN9R0-30LL,115 is an FET or MOSFET transistor that is suitable for low-power applications. It is noted for its low input capacitance, fast switching, and low power requirements. It is used in contactor controls, motor controls, switch gear, and automotive electronics, among others. Its key feature is its field-effect, which allows it to regulate the current flow between the source and drain when a voltage is applied to the gate terminal.
The specific data is subject to PDF, and the above content is for reference
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