
Allicdata Part #: | 1727-5283-ND |
Manufacturer Part#: |
PSMN3R5-80ES,127 |
Price: | $ 1.18 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | MOSFET N-CH 80V 120A I2PAK |
More Detail: | N-Channel 80V 120A (Tc) 338W (Tc) Through Hole I2P... |
DataSheet: | ![]() |
Quantity: | 1000 |
5000 +: | $ 1.05719 |
Vgs(th) (Max) @ Id: | 4V @ 1mA |
Package / Case: | TO-262-3 Long Leads, I²Pak, TO-262AA |
Supplier Device Package: | I2PAK |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 338W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 9800pF @ 30V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 139nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 3.5 mOhm @ 25A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 120A (Tc) |
Drain to Source Voltage (Vdss): | 80V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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FETs (field effect transistor) are an important part of modern electronics, as they are widely used in a variety of applications. One particular type, the PSMN3R5-80ES,127 is a kind of MOSFET (metal-oxide-semiconductor field-effect transistor) with a single gate. This transistor is versatile and cost-effective, making it a preferred choice for many applications. To understand the full power and capabilities of this device, it is important to first understand its application field and working principle.
Application Field of the PSMN3R5-80ES,127
The PSMN3R5-80ES,127 is suitable for a variety of tasks, such as switching and amplification. It is inexpensive and cost-effective when compared to other types of transistors, making it a popular choice. This transistor can be used in higher power switching applications such as audio amplifiers and switching power supplies. The PSMN3R5-80ES,127 is also useful for high-speed switching tasks, such as microprocessor logic switching. Additionally, it can be used in high frequency applications, such as power amplifiers, oscillators and radio frequency amplifiers.
Working Principle of the PSMN3R5-80ES,127
The PSMN3R5-80ES,127 is a N-channel enhancement-mode MOSFET, meaning that it has to be purposefully biased in order to switch. This transistor has a single gate, which makes it ideal for applications where space is limited, as well as applications that require switching speed. It works on the principle of field-effect, meaning that the voltage of the gate affects the electrical properties of the channel. When the gate voltage is low (less than the threshold voltage), the channel is in an off-state and no current can flow through the device. However, when the gate voltage rises above the threshold voltage, the channel “opens,” allowing for current to flow through the device. The higher the gate voltage, the higher the current flow will be. This transistor also has a relatively low on-resistance, which makes it efficient.
Conclusion
The PSMN3R5-80ES,127 is a versatile and cost-effective MOSFET transistor with a single gate. Its application field is broad, as it is suitable for tasks such as switching, amplification, and audio amplification. It works on the principle of field-effect, where a voltage applied to the gate directly affects the current flow through the device. The transistor is also highly efficient and has a relatively low on-resistance. With its combination of features, the PSMN3R5-80ES,127 is an ideal choice for many applications.
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