PSMN016-100PS,127 Allicdata Electronics
Allicdata Part #:

1727-4657-ND

Manufacturer Part#:

PSMN016-100PS,127

Price: $ 0.78
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: MOSFET N-CH 100V TO220AB
More Detail: N-Channel 100V 57A (Tj) 148W (Tc) Through Hole TO-...
DataSheet: PSMN016-100PS,127 datasheetPSMN016-100PS,127 Datasheet/PDF
Quantity: 2570
1 +: $ 0.70560
50 +: $ 0.56259
100 +: $ 0.49222
500 +: $ 0.38172
1000 +: $ 0.30135
Stock 2570Can Ship Immediately
$ 0.78
Specifications
Vgs(th) (Max) @ Id: 4V @ 1mA
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 148W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2404pF @ 50V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 49nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 16 mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 57A (Tj)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The PSMN016-100PS,127 is a N-channel metal oxide semiconductor field-effect transistor (MOSFET). This particular chip is part of the Power-SO-8 package lineup, meaning that this MOSFET is designed to operate in a high-power environment, as opposed to other types which focus on low-power operation. This type of MOSFET is typically used for higher current switching applications, like motor control and power supplies.

The PSMN016-100PS,127 N-channel MOSFET is composed of two terminal gates, a source and a drain. This structure allows it to be able to efficiently switch large currents with very low gate drive voltages. In addition, it also has excellent power-size ratio due to its small physical size. All this makes this type of MOSFET an ideal selection for applications requiring high power-density and small form factor components.

The PSMN016-100PS,127 operates as a voltage-controlled FET, meaning that the voltage applied to the gate acts as control input. This electric field is used to control the width of the channel between the source and drain terminals, which in turn controls the current flowing through the circuit. This type of MOSFET provides very efficient current switching capabilities, with low gate-source capacitance and minimal clock feed-through, thus making it ideal for applications requiring high speed switching.

This particular MOSFET has a breakdown voltage (drain-to-source voltage) of 100V, meaning that it can reliably operate up to that voltage. Additionally, it has a drain current of 16A (at 25°C), which is more than enough for most high power applications. This chip also has a maximum power dissipation of 200W, allowing it to safely handle large amounts of electrical energy.

The PSMN016-100PS,127 is typically used in many applications requiring switching power, like motor control, power supplies, audio amplifiers and displays. It is also suitable for voltage regulation, load switching and lamp control. This MOSFET can also be used for DC-DC and inverter applications. Additionally, it can be used in renewable energy applications, such as photovoltaic, solar and wind-power systems.

Overall, the PSMN016-100PS,127 is a highly efficient and reliable N-channel MOSFET. It is particularly well-suited for applications requiring high power and speed, such as motor control, power supplies and renewable energy systems. Its low gate-source capacitance and minimal clock feed-through allow for extremely quick switching, making it perfect for any high-performance system.

The specific data is subject to PDF, and the above content is for reference

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