PSMN7R0-30YLC,115 Discrete Semiconductor Products

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PSMN7R0-30YLC,115 is a single N-channel MOSFET (metal-oxide-semiconductor-field-effect-transistor) which belongs to the product family of ultra-low-voltage, super-junction MOSFETs announced by NXP semiconductors in June 2019. This product has excellent electrical characteristics such as low on-voltage, low on-resistance, and high breakdown voltage, making it suitable for various applications, including portable electronic applications and automotive applications such as DC-DC converters, power switches, and power-supply circuits. In this article, we will discuss the application field and working principle of the PSMN7R0-30YLC,115.

Overview of PSMN7R0-30YLC,115

The PSMN7R0-30YLC,115 is a high-performance, low-voltage MOSFET that offers superior electrical performance in an ultra-low-voltage package. The MOSFET has a 32V maximum breakdown voltage, a maximum on-resistance of 24 mΩ, and a maximum on-voltage of 1.3 V at 0.5A. The device is available in a 0402 (1.0 x 0.5 mm) package, making it suitable for use in portable electronic applications with space constraints.

Application Fields of PSMN7R0-30YLC,115

As mentioned above, the PSMN7R0-30YLC,115 is suitable for use in portable electronic applications and automotive applications. In portable applications, these devices offer superior electrical performance in a space-constrained package, making them ideal for use in portable devices such as mobile phones, tablets, and wearables.

In automotive applications, these devices are suitable for use in DC-DC converters, power switches, and power-supply circuits. The low-voltage, low-on-resistance, and high-breakdown-voltage characteristics of the device make it well suited for these types of applications. It is also highly reliable and can withstand high temperatures, making it suitable for use in demanding automotive environments.

Working Principle of PSMN7R0-30YLC,115

A MOSFET is a 3-terminal device that is used to control the flow of electric current. It consists of a source, gate and drain, which are connected internally as shown in the figure below. The MOSFET works on the principle of carrier depletion in the N- channel or P- channel as the case may be. When an input voltage is applied between the gate and source, it creates an electric field. This electric field forms an inversion layer on the conducting channel, allowing electrons to flow between the source and drain of the MOSFET. The electric current flowing through this channel can be controlled by the applied gate voltage, and the device can be used as an amplifier, switch, or voltage regulator.

The PSMN7R0-30YLC,115 is a single N-channel MOSFET, meaning that it is an N-channel device with one source, gate and drain. When a positive voltage is applied to the gate and a negative voltage is applied to the source, the channel under the gate becomes depleted of electrons and acts as an insulator. This results in the device being "OFF", i.e., there will be no current flow through the MOSFET. When the gate voltage is reduced or reversed, the channel becomes flooded with electrons, allowing current flow through the device. This results in the device being "ON", i.e., there will be current flow through the MOSFET.

In summary, the PSMN7R0-30YLC,115 is a single N-channel MOSFET with excellent electrical characteristics, making it suitable for use in portable and automotive applications. The device works on the principle of carrier depletion in the N-channel, and can be used as an amplifier, switch, or voltage regulator.

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