PSMN013-30MLC,115 Allicdata Electronics
Allicdata Part #:

1727-7138-2-ND

Manufacturer Part#:

PSMN013-30MLC,115

Price: $ 0.14
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: MOSFET N-CH 30V 39A LFPAK33
More Detail: N-Channel 30V 39A (Tc) 38W (Tc) Surface Mount LFPA...
DataSheet: PSMN013-30MLC,115 datasheetPSMN013-30MLC,115 Datasheet/PDF
Quantity: 1000
1500 +: $ 0.12317
Stock 1000Can Ship Immediately
$ 0.14
Specifications
Vgs(th) (Max) @ Id: 1.95V @ 1mA
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Supplier Device Package: LFPAK33
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 38W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 519pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 13.6 mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The PSMN013-30MLC,115 is a single N-channel MOSFET. It belongs to the Power MOSFET family which has properties that make it well suited for applications requiring high efficiency and increased power handling. The device has a very low threshold voltage and a higher maximum current than typical devices, making it ideal for switching circuits. The gate oxide is also capable of handling high gate charges, allowing the device to handle high switching speeds.

The PSMN013-30MLC,115 is commonly used in circuits that require high levels of efficiency and power handling. Its low threshold voltage makes it especially suitable for power supply circuits, as it reduces power losses from the gate leakage current. Its higher maximum current enables it to handle increased power demands. Additionally, the device\'s high gate charge capacity enables it to withstand high switching speeds.

This device can be used in a variety of ways, such as for motor control, audio amplifiers, and other switching applications. In motor control applications, the device\'s high efficiency allows for a high power output with a relatively low input voltage. In audio amplifiers, its low gate capacitance makes it suitable for noise cancellation. The device can also be used in low-side or high-side switching applications to reduce power losses and increase efficiency.

The PSMN013-30MLC,115 is designed to be used with a variety of control techniques. It can be used in on/off switching circuits, PWM (pulse width modulation) control circuits, as well as analog control circuits. Its low on-resistance allows for fast switching which can be beneficial for PWM control. Additionally, its low threshold voltage makes it suitable for analog control, allowing for precise voltage regulation.

As a single N-channel MOSFET, the PSMN013-30MLC,115 has some clear advantages over its competitors. Its high maximum current and low threshold voltage make it ideal for power supply circuits as well as PWM and analog control. Additionally, its high gate oxide charge capacity enables it to withstand high switching speeds, making it suitable for high power applications. It is also compatible with a variety of control techniques to accommodate different applications.

The specific data is subject to PDF, and the above content is for reference

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