PSMN8R5-60YS,115

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PSMN8R5-60YS,115 is a single N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed and manufactured by Infineon technology. This type of transistor has its own application field and working principle.

Application Field

PSMN8R5-60YS,115 is mainly used for high-voltage DC-DC step-down (Buck) converter, clamped synchronous rectification, DC or AC motor drives, and other high-side switches applications. It is equipped with the latest, state-of-the-art trench design and power management technologies, which combine to provide very low R_DS(ON) and extremely fast switching efficiencies.

Working Principle

This MOSFET is a voltage-controlled semiconductor device which is increasingly being used in modern power switching circuits. Its working can be explained in following steps:

• Voltage Application: An input voltage is applied across the MOSFET gate and drain electrodes.
• Inversion Layer Formation: This applied voltage creates an inversion layer of electrons in the MOSFET channel.
• Current Flow: This inversion layer acts as a conducting path and allows electrons to flow from source to drain.

This working principle of the MOSFET allows the gate voltage to have full control over the current flowing across it. This makes it an ideal choice for power switching applications which require high- speed switching capabilities.

Performance Characteristics

This MOSFET comes with several performance characteristics, namely:

• High Breakdown Voltage: This transistor has a high breakdown voltage of 600 volts.
• Low On-Resistance: It has an attractive low on-resistance valued at 8.5 mΩ max.
• Low Leakage Current: This transistor has a very low leakage current of 90 µA max.
• High-speed Switching: It has an impressive switching speed of 6 ns max.
• Low Gate Charge: It has an ultra-low gate charge of 3.2 nC max.

Advantages

This MOSFET has several advantages over its predecessors, such as:

• Smaller Sized Packages: With the implementation of latest trench technology, this transistor is much smaller in size, which makes it easier to install and operate.
• Lower R_DS(ON): It has a low R_DS(ON) thanks to its advanced trench design.
• Lower Drain-Source Voltage Loss: The ultra-low gate charge of this MOSFET leads to a lower drain-source voltage drop, making it more efficient.
• Improved Device Performance: This device has improved performance and reliability compared to previous generation MOSFETs.
• High Packaging Density: Because of its small physical size, this MOSFET can be packed in higher density, thus reducing the size and cost of the product.

Conclusion

The PSMN8R5-60YS,115 MOSFET is a high-performance transistor, which is mainly used for high-voltage power switching applications.It has an impressive high breakdown voltage of 600 volts, a low on-resistance of 8.5 mΩ max, and high-speed switching of 6 ns max.Moreover, it features smaller sized packages, lower drift-source voltage drop, improved device performance, and high packaging density.All these advantages and features make it an ideal choice for applications such as high-voltage DC-DC step-down (Buck) converter,clamped synchronous rectification, and DC or AC motor drives.

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