Allicdata Part #: | PSMN018-100ESFQ-ND |
Manufacturer Part#: |
PSMN018-100ESFQ |
Price: | $ 0.40 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | MOSFET N-CHANNEL 100V 53A I2PAK |
More Detail: | N-Channel 100V 53A (Ta) 111W (Ta) Through Hole I2P... |
DataSheet: | PSMN018-100ESFQ Datasheet/PDF |
Quantity: | 1000 |
5000 +: | $ 0.36105 |
Vgs(th) (Max) @ Id: | 4V @ 1mA |
Package / Case: | TO-220-3, Short Tab |
Supplier Device Package: | I2PAK |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 111W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1482pF @ 50V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 21.4nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 18 mOhm @ 15A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 7V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 53A (Ta) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The PSMN018-100ESFQ is a type of FET or Field Effect Transistor, sometimes referred to as a MOSFET or Metal Oxide Semiconductor Field Effect Transistor. It is used in a wide variety of applications, from power control to amplifier circuits. In this article, we will discuss the applications of this type of transistor, as well as the working principles behind it.
Applications
The PSMN018-100ESFQ is often used in power control applications, such as LED circuits and motor control. It can be used as a high-efficiency switch to control the current flow in a circuit. It can also be used as a power amplifier, providing gain for audio signals. Furthermore, it can also be used for signal switching, such as for analog or digital signals.
The PSMN018-100ESFQ can also be used for voltage regulation applications, such as for powering sensitive microcontroller circuits. It can be used to reduce the current flow or ripple from the main power supply, ensuring that the circuit gets a steady supply of power. It can also be used for voltage scaling, allowing a circuit to run at different voltages, depending on the application.
The PSMN018-100ESFQ can also be used in analogue circuits, where it is used to amplify small signals, such as the ones that come from microphones or sensors. It can also be used as a low-noise amplifier, allowing a signal to be amplified without adding too much noise.
Finally, the PSMN018-100ESFQ can be used in applications that require high power density, such as in automotive and aerospace applications. Its small size and high current capacity make it ideal for high-power, high-temperature applications.
Working Principle
The main working principle of a FET is best explained using the "Source-Drain-Gate" analogy. The gate is the controlling pin and acts as a switch that can be opened or closed, depending on the applied voltage. When the gate is open, current flows between the source and the drain. When the gate is closed, no current flows. The voltage at the gate determines the resistance between the source and the drain. The higher the voltage, the lower the resistance.
The PSMN018-100ESFQ is a type of enhancement mode MOSFET, which means that it is normally off, but can be turned on when a positive voltage is applied to the gate. This type of device is ideal for applications that require a low “on” resistance and a high "off" resistance, such as in power control circuits. It also has an exceptionally low power dissipation, making it suitable for high-power applications.
The PSMN018-100ESFQ is often paired with other components, such as capacitors and resistors, to form a complete circuit. When combined, these components can be used to create a wide range of applications, ranging from power control to audio amplification. They can also be used to protect sensitive circuits, by providing current limiting or preventing over-voltage.
Overall, the PSMN018-100ESFQ is useful in a wide range of applications, from power control to audio amplification, and is an invaluable component in any electronic circuit. With its small size and high current capacity, it is an ideal choice for high-power, high-temperature applications.
The specific data is subject to PDF, and the above content is for reference
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