| Allicdata Part #: | 1727-5287-ND |
| Manufacturer Part#: |
PSMN1R1-30EL,127 |
| Price: | $ 2.02 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Nexperia USA Inc. |
| Short Description: | MOSFET N-CH 30V 120A I2PAK |
| More Detail: | N-Channel 30V 120A (Tc) 338W (Tc) Through Hole I2P... |
| DataSheet: | PSMN1R1-30EL,127 Datasheet/PDF |
| Quantity: | 4552 |
| 1 +: | $ 1.83330 |
| 50 +: | $ 1.48012 |
| 100 +: | $ 1.33213 |
| 500 +: | $ 1.03611 |
| 1000 +: | $ 0.85849 |
| Vgs(th) (Max) @ Id: | 2.2V @ 1mA |
| Package / Case: | TO-262-3 Long Leads, I²Pak, TO-262AA |
| Supplier Device Package: | I2PAK |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max): | 338W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 14850pF @ 15V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 243nC @ 10V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 1.3 mOhm @ 25A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 120A (Tc) |
| Drain to Source Voltage (Vdss): | 30V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tube |
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PSMN1R1-30EL,127 Application Field and Working Principle
The PSMN1R1-30EL,127 transistor is a Power MOSFET transistors designed for high side switch applications in portable applications. These transistors are designed for low voltage and low on-state resistance. They offer extremely low gate charge and internal gate resistance, allowing for improved performance and power efficiency in circuits. PSMN1R1-30EL,127 transistors provide excellent stability, high frequency performance, and low Kelvin resistance. This makes them ideal for high current power applications.
PSMN1R1-30EL,127 transistors are ideal for use in applications where on-state resistance needs to be reduced even further, as compared to ESD-protected transistors. When used in low power circuits, they allow for low switching losses and improved efficiency. They also provide good transient protection when used in high current circuits. The transistors provide excellent protection against electrostatic discharges, making them suitable for use in sensitive electronics.
PSMN1R1-30EL,127 transistors work on the principle of the MOSFET (metal oxide semiconductor field-effect transistor) technology. It uses a source and drain junction which are connected by a n-channel or p-channel. The n- or p-channel forms a depletion region or semiconductor channel between the source and drain, enabling current to flow through it. Applying a voltage to the gate of the transistor creates an electric field which controls the conductivity of the current. By controlling the gate voltage, the flow of current through the channel can be regulated.
The PSMN1R1-30EL,127 transistors are suitable for use in a wide range of applications. Common examples include industrial machines, TVs, audio amplifiers, computer fans, and power switching systems. They can be used as the main controller in mobile phones and portable electronics such as laptops. The transistors are also used in lighting and high-speed switching circuits such as pulse-width modulators and other power electronics. Additionally, they are used in switching systems in computers and other programmable logic controllers.
In conclusion, the PSMN1R1-30EL,127 transistor is an ideal choice for industrial and consumer applications that require low on-state resistance and high current applications. This makes them an excellent choice for use in low power devices, as well as high-speed switching circuits and digital control systems. The transistors offer excellent protection from electrostatic discharges, allowing them to be an ideal choice for sensitive electronics. Finally, the transistors work on the principle of MOSFET technology, enabling them to be used in a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
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PSMN1R1-30EL,127 Datasheet/PDF