PSMN2R6-30YLC,115

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

PSMN2R6-30YLC,115 is a power MOSFET designed for switching and linear applications. It is a new generation of medium voltage MOSFETs utilizing high cell density trench process technology. This device has a drain-source breakdown voltage of 700 V (VDSS) and a maximum drain current of 3.2 A (ID), making it ideal for a wide range of applications.

The PSMN2R6-30YLC,115 is a single-transistor MOSFET that belongs to the family of field-effect transistors (FETs). Unlike bipolar junction transistors, FETs are voltage-controlled devices, meaning the current flowing through the device is predominantly determined by the voltage applied to its gate terminal. The MOSFET channel can be thought of as an electrically conductive barrier between the source and drain terminals. When a voltage is applied to the gate, it creates an electric field that attracts charge carriers and produces an inversion layer within the channel. This inversion layer creates an internal electric field that opposes the external field, resulting in an increase in Drain-Source current.

The PSMN2R6-30YLC,115 is an N-Channel MOSFET, meaning it utilizes a majority carrier of electrons as its charge carriers. This device is unique as it employs a low-voltage breakdown rating (VDSS) of 700V. This feature enables higher efficiency and lower conduction losses for comparable applications when compared with other MOSFETs with higher breakdown voltages. Additionally, its RDS(ON) resistance is low at 2.6 mΩ, making it ideal for power management applications.

The PSMN2R6-30YLC,115 offers high switching speeds due to its low gate-drain charge (Qgd) value of 12nC. This means that the device can switch at high speeds while operating with extremely low power losses. Due to its low threshold voltage of 2V, this device is well suited for applications operating on low voltage supplies. Lastly, the simple two-pin package ensures excellent thermal stability and facilitates easier installation.

In sum, the PSMN2R6-30YLC,115 is a power MOSFET designed for a wide range of applications. Due to its low (Vdss) breakdown voltage of 900V, low (RDS(ON)) on resistance of 2.6 mΩ, and low gate-drain charge (Qgd) of 12nC, this device is well suited for high-efficiency and low-power applications. Its simple two-pin package also ensures excellent thermal stability and facilitates easier installation. Thus, the PSMN2R6-30YLC,115 is one of the most efficient and cost-effective MOSFETs available on the market.

The specific data is subject to PDF, and the above content is for reference