| Allicdata Part #: | SI1402DH-T1-GE3-ND |
| Manufacturer Part#: |
SI1402DH-T1-GE3 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Vishay Siliconix |
| Short Description: | MOSFET N-CH 30V 2.7A SOT363 |
| More Detail: | N-Channel 30V 2.7A (Ta) 950mW (Ta) Surface Mount S... |
| DataSheet: |  SI1402DH-T1-GE3 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
Specifications
| Vgs(th) (Max) @ Id: | 1.6V @ 250µA |
| Package / Case: | 6-TSSOP, SC-88, SOT-363 |
| Supplier Device Package: | SC-70-6 (SOT-363) |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 950mW (Ta) |
| FET Feature: | -- |
| Vgs (Max): | ±12V |
| Gate Charge (Qg) (Max) @ Vgs: | 4.5nC @ 4.5V |
| Series: | TrenchFET® |
| Rds On (Max) @ Id, Vgs: | 77 mOhm @ 3A, 4.5V |
| Drive Voltage (Max Rds On, Min Rds On): | 2.5V, 4.5V |
| Current - Continuous Drain (Id) @ 25°C: | 2.7A (Ta) |
| Drain to Source Voltage (Vdss): | 30V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tape & Reel (TR) |
Description
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The SI1402DH-T1-GE3 transistor is one of the most versatile and widely used transistors on the market today. It is a single gate field effect transistor (FET) with a number of unique features and applications. This article will focus on the application field and working principle of the SI1402DH-T1-GE3.The SI1402DH-T1-GE3 is a small signal FET with a P-channel junction. This means that it is specially designed for low-power, low-voltage applications, such as amplifying and switching circuits. It also has a very low drain-source ON-resistance, making it an ideal choice for power saving devices.The FET can be used in many different scenarios, ranging from small audio preamplifiers to large-scale low-noise amplifiers. It is also used in power supplies and analog-to-digital converters. Additionally, the FET is suitable for radio frequency (RF) applications, such as frequency filters and switch audio functions.The basic working principle of the FET is to draw electric current between the source and drain terminals. This current is regulated by the amount of electric field generated by the gate terminal. The gate of the FET is normally open, but when a voltage is applied to it, the gate creates an electric field that controls the current between the source and drain.This electric field between the source and drain creates a “barrier” that prevents the current from flowing. This is known as the gate-source voltage. By adjusting the gate-source voltage, the amount of current flowing through the FET can be finely tuned. This makes it possible to create amplifiers, filters, and other complex circuits that require precise control of the current.In addition to its use in low-power applications, the SI1402DH-T1-GE3 can also be used in larger, higher-power circuits. Since it is a high-voltage FET, it can be used as a switch for controlling the flow of large currents. This makes it perfect for use in power distribution circuits, motor control systems, and other high-power applications.The SI1402DH-T1-GE3 is an incredibly versatile and powerful transistor, which makes it an excellent choice for a wide variety of applications. Its unique features and working principle make it an ideal choice for low-power and high-power applications alike. With its wide range of applications and its ability to provide precise current control, the SI1402DH-T1-GE3 is sure to be a popular choice among engineers and hobbyists alike.
The specific data is subject to PDF, and the above content is for reference
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