SI1489EDH-T1-GE3 Discrete Semiconductor Products

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The SI1489EDH-T1-GE3 is a single N-channel enhancement mode field effect transistor (FET) housed in a TO-251 (DPAK) package. N-channel FETs are the most popular type of FET and are often compared to a switch, with an on state (high conductance) or an off state (low conductance). They are used in many applications from small signal to large power switches, and from switching to analog circuitry. In this article, we\'ll discuss the applications, working principle and other important characteristics of the SI1489EDH-T1-GE3.

Applications

The SI1489EDH-T1-GE3 is used in a variety of applications, including motor drives, power management, and power switching. Its small footprint makes it ideal for use in small form factor applications, while its high current capability makes it perfect for larger motors, power management, and power switching applications. It is also well suited for applications such as instrumentation, audio amplification, and portable device power management.

Working Principle

The working principle of the SI1489EDH-T1-GE3 is based on the flow of electrons between two terminals of a N-channel FET. One terminal, the gate, controls the flow of electrons between the source and the drain. When the gate voltage has a positive charge, electrons are allowed to flow from the source to the drain. When the gate voltage has a negative charge, the flow of electrons is blocked. This control of electron flow allows the device to be used as a switch or as an amplifier, depending on the application.

Other Characteristics

The SI1489EDH-T1-GE3 has a low on-resistance of 17.3 milliohms and a low gate-drain capacitance of 6.9 pF. Its maximum drain-source voltage is 60 volts and maximum gate-source voltage is 20 volts. In addition, it has a high power handling capability of up to 150 watts. Its temperature range is -55°C to 150°C, making it suitable for use in extreme environments. Its high-current handling, low capacitance and other features make it ideal for many industrial applications.

Conclusion

The SI1489EDH-T1-GE3 is a single N-channel enhancement mode field effect transistor (FET) with a wide range of applications from small signal to large power switches, and from analog circuitry to motor drives. Its low on-resistance, high power handling capability, and low capacitance make it an ideal choice for many applications. By understanding the working principle and other important characteristics of this device, engineers can make informed design decisions for a wide range of applications.

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