SI1403BDL-T1-GE3 Allicdata Electronics
Allicdata Part #:

SI1403BDL-T1-GE3TR-ND

Manufacturer Part#:

SI1403BDL-T1-GE3

Price: $ 0.14
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET P-CH 20V 1.5A SC70-6
More Detail: P-Channel 20V 1.5A (Ta) 625mW (Ta) Surface Mount S...
DataSheet: SI1403BDL-T1-GE3 datasheetSI1403BDL-T1-GE3 Datasheet/PDF
Quantity: 6000
1 +: $ 0.14000
10 +: $ 0.13580
100 +: $ 0.13300
1000 +: $ 0.13020
10000 +: $ 0.12600
Stock 6000Can Ship Immediately
$ 0.14
Specifications
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 625mW (Ta)
FET Feature: --
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 4.5V
Series: TrenchFET®
Rds On (Max) @ Id, Vgs: 150 mOhm @ 1.5A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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A SI1403BDL-T1-GE3 transistor is a semiconductor electronic part developed by Siliconix, a leading manufacturer of electronic components. It is a single final enhancement mode N-channel metal-oxide-semiconductor field effect (MOSFET) transistor, used for switching and/or amplifying applications.

The SI1403BDL-T1-GE3 has many advantages over conventional transistors. It is constructed of a single MOSFET, which can operate in both positive and negative polarities. This means that it is ideal for use in bi-directional logic circuits. It also provides high current carrying capacity and low power requirements. These two characteristics make it very suitable for use in low voltage, high current applications, such as automotive applications.

The SI1403BDL-T1-GE3 has two main application fields. In the first, it is used to switch large currents in electronic circuits. This is achieved by controlling the amount of current flowing between two terminals. As the voltage applied to the gate of the transistor increases, so does the amount of current flowing through the transistor. The device allows for very precise control of the current, allowing for very efficient and accurate switching.

The second application field for the SI1403BDL-T1-GE3 is in the amplifying of weak signals for use in audio systems. When a very weak signal is applied to the transistor’s gate, it amplifies the signal enough to drive the output of the device, thus allowing the audio system to exploit the signal. Similarly, when a stronger signal is applied to the device, the transistor amplifies the signal before driving the output of the audio system.

The operation of the SI1403BDL-T1-GE3 is fairly simple. When a voltage is applied to the gate of the device, current begins to flow through the channel. This current is determined by the size of the channel as well as the applied voltage. As the voltage increases, the current flowing through the transistor also increases, allowing for very precise control. Beyond this, the operation is similar to that of a standard MOSFET, using the same basic principles.

By taking advantage of the low voltage and high current carrying capacity of the SI1403BDL-T1-GE3, modern automotive engineers are able to create more efficient cars. This device is also used in audio systems for amplifying weak signals. The SI1403BDL-T1-GE3 is a versatile device, suitable for a wide range of applications.

The specific data is subject to PDF, and the above content is for reference

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