SI1442DH-T1-GE3

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The SI1442DH-T1-GE3 is a single P-Channel MOSFET that is ideal for use in low-side switch applications such as LED lighting, DCDC converters, and motor controls. The MOSFET combines high density, small (MPAK5x5) package size, low switching loss, and low gate charge characteristics in a single device. It is therefore an ideal choice for space constrained applications where high power conversion and efficient power delivery are required. This article will cover the application field and working principle of the SI1442DH-T1-GE3.

Application Field of SI1442DH-T1-GE3

The SI1442DH-T1-GE3 is well suited for a variety of applications requiring low power conversion, efficient power delivery, and space constrained applications. These include LED lighting, DCDC converters, motor controls, and automotive space applications. It is specifically designed with an extended drain-source voltage to make it suitable for automotive applications. It has the ability to handle high current and voltage applications, up to 32V and 77A.

It is ideally suited for designer applications that require an efficient, space saving MOSFET that can handle high current at low losses. It can also be used in high voltage applications as well. It can be easily integrated into any design with its low gate charge and low dc resistance values. The product is UL Recognized and AEC-Q101 qualified, adding to its appeal for safety conscious applications.

Working Principle of SI1442DH-T1-GE3

The SI1442DH-T1-GE3 is a single P-Channel MOSFET, meaning it uses an insulated gate to control the flow of carriers through the channel region of the device. It is composed of an array of P-type transistors that are connected together in parallel. When the gate voltage is applied, it creates an electric field which attracts electrons to the source and out of the drain. This increases the channel current between the source and drain, and reduces the gate voltage. When the gate voltage is released, the electrons are forced back into their original positions, allowing the channel current to be shut off, and reducing the drain-source voltage.

The MOSFET is designed with a low on-state resistance and low conduction loss, making it suitable for high current applications. The device has high current handling capability, making it ideal for automotive applications. Additionally, the small package size, low switching loss, and low gate charge characteristics make the SI1442DH-T1-GE3 a superior choice for space constrained applications.

Conclusion

The SI1442DH-T1-GE3 is a single P-Channel MOSFET designed for low power conversion, efficient power delivery, high current handling, and low losses. It is well suited for LED lighting, DCDC converters, motor controls, and automotive space applications. It has a low on-state resistance, low conduction loss, and small package size, making it ideal for space constrained applications. The device is also UL Recognized and AEC-Q101 qualified making it a safe choice for safety conscious applications.

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