Vgs(th) (Max) @ Id:	4.5V @ 100µA
Package / Case:	6-TSSOP, SC-88, SOT-363
Supplier Device Package:	SC-70-6 (SOT-363)
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	1W (Ta)
FET Feature:	--
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	6.2nC @ 10V
Series:	TrenchFET®
Rds On (Max) @ Id, Vgs:	5 Ohm @ 400mA, 10V
Drive Voltage (Max Rds On, Min Rds On):	6V, 10V
Current - Continuous Drain (Id) @ 25°C:	300mA (Ta)
Drain to Source Voltage (Vdss):	200V
Technology:	MOSFET (Metal Oxide)
FET Type:	P-Channel
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

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SI1419DH-T1-E3 Application Field and Working Principle

SI1419DH-T1-E3 is a type of single-field-effect transistor (FET). It is part of a large family of FETs that are typically used as switches, voltage regulators, and amplifiers in variety of applications. This particular type of FET can be used to increase the speed of digital switches and transistors.FETs are three terminal devices that are constructed by sandwiching a thin film of semiconductor material between two metal or semiconductor gates. The FETs control the current flow between the two terminals by modulating the voltage across the channel of the FET. FETs are considered to be high-impedance devices and are ideal for controlling current flow through a circuit without having to use a large amount of power.The SI1419DH-T1-E3 FET is a N-channel FET that has a drain to source breakdown voltage of 15 V and a gate-to-source breakdown voltage of 9 V. It has an on-resistance of 45 mOhms and a gate capacitance of 35.5 pF. This type of FET is ideal for use in power transistor circuits such as those used in power supplies and motor control circuits.The working principle of the SI1419DH-T1-E3 FET is the same as any other FET. An applied voltage to the gate of the FET allows a current to flow through the FET. The current flow is proportional to the voltage applied to the gate and is, in effect, a voltage-controlled resistor. The current flow is determined by the amount of charge on the gate and the resistance/capacitance ratio of the FET.One of the main advantages of using the SI1419DH-T1-E3 FET is its low-power consumption. This type of FET does not require a large amount of power to control the current flow and is thus very efficient. The low-power consumption is an advantage in portable, battery powered applications and makes the SI1419DH-T1-E3 ideal for use in these applications.The SI1419DH-T1-E3 FET can also be used in high-frequency switching applications. By switching the current on and off in high frequency, very fast switching times can be achieved, making the SI1419DH-T1-E3 FET ideal for use in communication circuits.In summary, the SI1419DH-T1-E3 FET is a single N-channel FET that has a breakdown voltage of 15 V and a gate to source breakdown voltage of 9 V. It has an on-resistance of 45 mOhms and has a gate capacitance of 35.5 pF. It is ideal for use in low-power applications such as portable and battery powered circuits, as well as in high-frequency switching applications. Its low-power consumption makes it a perfect candidate for these types of applications.

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