SI1428EDH-T1-GE3

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The SI1428EDH-T1-GE3 is a N-channel enhancement modepower field effect transistor designed for direct logic level interface applications. It has an on-resistance of 7.6Ω, a forward transfer OADC of 12.5A, and is fast enough to switch 500ps in the packages of TO-220, DPAK, SOT-223, D2PAK, and SIP-3, making it the go-to higher current N-channel FET for a wide range of connected components.

The SI1428EDH-T1-GE3 is a high-performance, low-voltage, high-frequency, multilayer metal-oxide semiconductor field effect transistor (MOSFET). It is a single N-channel enhancement mode MOSFET capable of switching large current and/or high frequency signals with low on-resistance and fast switching times. This device is well suited for applications such as audio amplifiers, switching power supplies, e-cigarette control systems, intelligent traffic lights, and real-time data acquisition systems. It can also be used in industry-standard digital logic circuits, where output drive requirements dictate MOSFETs.

The SI1428EDH-T1-GE3 is based on the principle of formation of a channel and depletion of source-drain junction as shown in the figure below. When the voltage application is equal or higher than the threshold voltage (Vth) of the device, an n-channel forms in a reverse-biased pn junction between the drain and channel region of the MOSFET. This forms an inversion layer that conducts electrons between the drain and the source terminals. The amount of charge carriers carried by the channel depends on the voltage applied and the current flowing through the device can be then determined by Ohm’s law.

The SI1428EDH-T1-GE3 is designed with low voltage, high-speed operation in mind. It has a maximum drain-source breakdown voltage of 30V, a maximum gate-source voltage of 8V, a maximum drain-source on-resistance of 7.6Ω and a maximum gate-source leakage of 1nA at 5V. Furthermore, it features a low-capacitance design that minimizes Ciss and Crss to improve device switching speed. The on-resistance is kept low by the use of an optimized vertical structure with increased surface area.

The SI1428EDH-T1-GE3 is a versatile device suitable for use in a variety of applications. It is a perfect choice for audio amplifiers, switching power supplies, and e-cigarette control systems, thanks to its low noise and its low on-resistance. It can also be used in standard digital logic circuits, where output drive capability dictates MOSFETs. Finally, its high frequency operation makes it suitable for real-time data acquisition systems, such as for use in the automotive industry.

In conclusion, the SI1428EDH-T1-GE3 is an ideal device for a wide range of applications from consumer electronics to automotive controls. Its low voltage, high-speed operation makes it suitable for high-frequency signal switching and its low on-resistance makes it ideal for applications requiring efficient power conversion. Furthermore, its small size and versatile packages make it a perfect choice for circuit boards with limited space.

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