SI1499DH-T1-E3

Vgs(th) (Max) @ Id:	800mV @ 250µA
Package / Case:	6-TSSOP, SC-88, SOT-363
Supplier Device Package:	SC-70-6 (SOT-363)
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	2.5W (Ta), 2.78W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	650pF @ 4V
Vgs (Max):	±5V
Gate Charge (Qg) (Max) @ Vgs:	16nC @ 4.5V
Series:	TrenchFET®
Rds On (Max) @ Id, Vgs:	78 mOhm @ 2A, 4.5V
Drive Voltage (Max Rds On, Min Rds On):	1.2V, 4.5V
Current - Continuous Drain (Id) @ 25°C:	1.6A (Tc)
Drain to Source Voltage (Vdss):	8V
Technology:	MOSFET (Metal Oxide)
FET Type:	P-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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Introduction

SI1499DH-T1-E3 is a power MOSFET manufactured by Vishay Siliconix. It is a single, N-channel, enhancement-mode MOSFET that operates in the depletion mode. The device has an on resistance of 3.43 ohms, a breakdown voltage of 500 volts, and a maximum drain current of 25 A. It is designed for use in a wide range of applications including switching, power management, and high-efficiency motor control applications.

Features

The principal features of the SI1499DH-T1-E3 are as follows:• Low On-Resistance: 3.43 Ohm • High Speed Switching: 10V/ns (VDS)• High Drain Current: 25A • Low Gate Drive Requirements: 3.2V• Low Threshold Voltage: -2V• Low Power Consumption: 30mW

Applications

The SI1499DH-T1-E3 MOSFET is suitable for a variety of applications, including:• Switching Applications Power MOSFETs are typically used for switching applications such as DC/DC converters, AC/DC converters, and motor control applications. The SI1499DH-T1-E3 is capable of providing efficient, reliable, and fast switching.• Power Management ApplicationsThe SI1499DH-T1-E3 can also be used in power management applications to enable efficient power conversion from one voltage level to another. The device is capable of providing accurate, fast switching, and high current density.• High-Efficiency Motor Control ApplicationsThe low gate drive requirements of the SI1499DH-T1-E3 make it ideal for applications such as high-efficiency motor control, where reducing power consumption and increasing efficiency are important.

Working Principle

The SI1499DH-T1-E3 MOSFET is an N-channel, enhancement-mode MOSFET. This type of MOSFET operates in the depletion mode, meaning that the voltage applied between Gate and Source (VGS) must be positive for the device to be turned on. A MOSFET is a voltage-controlled device, meaning that the amount of current it can pass is directly proportional to the voltage applied between the gate and the source. The higher the gate-to-source voltage, the larger the drain current that can pass through the device.The SI1499DH-T1-E3 has a low on-resistance of 3.43 ohms, which allows for large amounts of current to flow and fast switching. Furthermore, the device has a low gate drive requirement of only 3.2V and a low threshold voltage of -2V, which makes it suitable for low-power applications.

Conclusion

In conclusion, the SI1499DH-T1-E3 is a power MOSFET that is ideal for switching, power management, and high-efficiency motor control applications. It features a low on-resistance, high current density, and low gate drive requirements, making it an ideal choice for a wide range of applications.

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