SI1450DH-T1-GE3

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The SI1450DH-T1-GE3 is a single N-Channel enhancement mode MOSFET (metal-oxide semiconductor field-effect transistor) designed for high current and low voltage power conversion applications.

At a glance, the MOSFET device has an IRF540N physical characteristics shown in Table 1. It has a P-doped source and Drain contact, an N-doped drain, and a metal gate for control. The device measures 3mm x 2.2mm in size, though when mounted and ready to be used, this size can increase depending on the application.

Its drain current is rated up to 30A, with a Pulsed Drain Current of 60A, both at a temperature of 25 degrees Celsius. The drain source voltage is only 20V, but the Basic Insulation Level (BIL) rating is 2.5kV, making SI1450DH-T1-GE3 ideal if high levels of safety are needed. The devices operate between -55 degrees and 150 degrees Celsius, so they can be used in a variety of applications. The maximum drain-source on-state resistance (RDS(on)) of the device is only 0.0025 ohms, meaning that it is well-suited for applications such as power converters.

The SI1450DH-T1-GE3 is typically used in applications such as motor control, DC/DC converters, voltage regulation, Class D audio amplifiers, Bluetooth speakers, and HVAC systems. These applications require that the MOSFET is able to withstand high voltage and current, so the low RDS(on) and high BIL rating makes them ideal for these tasks.

The SI1450DH-T1-GE3 works by using the gate-source voltage (VGS) to control the flow of current between the source and drain. When the VGS voltage is below the threshold voltage, then the device is in the off state. When the VGS voltage is above the threshold voltage, then current flows from the source to the drain. When the VGS voltage is high enough, the device is then said to be in the saturation region, which is when the RDS(on) is at its lowest.

In short, the SI1450DH-T1-GE3 is an excellent device for high voltage and current applications, like DC/DC converters, motor control, and voltage regulators. It has high BIL rating and low RDS(on) making it highly reliable when compared to other MOSFET devices.

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