SI1471DH-T1-GE3 Discrete Semiconductor Products

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The SI1471DH-T1-GE3 is a surface mount, silicon-on-insulator n-channel enhancement mode MOSFET (Metal Oxide Semiconductor Field Effect Transistor). Developed and manufactured by Vishay Siliconix, the SI1471DH-T1-GE3 is designed for low-power switching and data acquisition applications in mobile and consumer electronics.

Its key features include a relatively low inherent turn-on and turn-off delay time, low on resistance, and low gate charge. This device offers excellent power efficiency when used in the right application. It is RoHS compliant and, in combination with its low on-resistance, is attractive for designers looking to reduce power consumption.

The SI1471DH-T1-GE3 is implemented in a small RoHS-compliant SOT-363 package. This is a surface-mountable, 3-lead package featuring an accessible top-side, allowing for easy manipulation of the gate. This allows for simple, fast prototyping and quick integration into existing circuit designs.

The core of the SI1471DH-T1-GE3 is a MOSFET device which, in simple terms, works by modulating the flow of charge through it. When a positive voltage is applied to the gate, it creates an electric field which attracts electrons, thus allowing current to flow and the MOSFET to be "on". When the positive voltage is removed, the electric field disappears and the device reverts to its "off" state.

The SI1471DH-T1-GE3 is best suited to low-power applications such as data acquisition, home automation, air-conditioning, computer peripheral and LCD displays, and automotive applications. It also finds use in combination with analogue switches for “one touch” control solutions and in digital power supplies.

The advantages of the SI1471DH-T1-GE3 include its RoHS compliance, its low on-resistance and gate charge, as well as its relatively low turn-on and turn-off delay time. This makes it a good choice for low-power switching applications where power efficiency is a priority. Its small package size makes it suitable for both prototyping and commercial designs.

The SI1471DH-T1-GE3 uses the same principle of operation as other MOSFETs. It is an n-channel MOSFET, meaning that it allows electrons to flow through it when a positive voltage is applied to the gate. The device is "on" when the gate voltage is positive, and "off" when the voltage is removed. This allows the SI1471DH-T1-GE3 to be used in applications where the goal is to modulate the flow of current, such as those mentioned above.

In summary, the SI1471DH-T1-GE3 is a low-power, energy efficient MOSFET developed and manufactured by Vishay Siliconix. It is suitable for a range of low-power applications such as data acquisition, home automation, and digital power supplies. Its low on-resistance, gate charge, and relatively low turn-on and turn-off delay times make it attractive for designers looking to reduce power consumption. It is available in a small, RoHS-compliant package and can be used with both prototyping and commercial designs.

The specific data is subject to PDF, and the above content is for reference