SI1416EDH-T1-GE3

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The SI1416EDH-T1-GE3 is a single N-channel enhancement mode MOSFET, manufactured by Vishay Semiconductor. The device has discrete surface mount construction, which means it can be used in applications where a minimal profile is desired. The SI1416EDH-T1-GE3 is designed for use in a wide variety of applications, including switching and power distribution, motor control, and solenoid control. It can also be used in power management systems for mobile devices.

The device is designed with a 0.15 micron constrained geometric silicon-on-insulator substrate technology (CG-SOI). This allows the MOSFET to have a very low on-resistance, while also providing an improved level of protection against electrostatic discharge. The on-resistance of the device is 35μΩ at a gate voltage of 4V. This makes the SI1416EDH-T1-GE3 ideal for high-speed switching and power distribution applications.

The working principle of the SI1416EDH-T1-GE3 is based on the physics of metal-oxide-semiconductor field-effect transistors (MOSFET). This type of transistor is composed of three layers: a source, a gate and a drain. The transistor is controlled by the voltage applied to the gate. When a positive voltage is applied to the gate, electrons are attracted to the gate, creating an inversion channel underneath it. This channel allows current to flow through the device. When a negative voltage is applied to the gate, the channel is reversed and current is blocked.

The SI1416EDH-T1-GE3 has a maximum operating voltage of 28V and a maximum drain-source breakdown voltage of 30V. It also features ESD protection up to 2kV. This makes the device suitable for a wide range of applications, including motor control, power management systems and laser diode drivers.

In summary, the SI1416EDH-T1-GE3 is a single N-channel enhancement mode power MOSFET designed for a wide variety of applications, including switching and power distribution, motor control and solenoid control. The device is based on the physics of metal-oxide-semiconductor field-effect transistors, and is designed with a 0.15 micron CG-SOI substrate technology for improved power efficiency. The SI1416EDH-T1-GE3 has a maximum operating voltage of 28V and a maximum drain-source breakdown voltage of 30V, as well as ESD protection up to 2kV. All these features make it an ideal choice for high-speed switching and power distribution applications.

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