SI1431DH-T1-E3

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The SI1431DH-T1-E3 MOSFET is an advanced, low-cost, low-input capacitance, single N-channel enhancement-mode power MOSFET. This device uses advanced trench technology to provide superior RDS(on). It has been optimized to minimize input capacitance and gate-source charge and enhance fast switching performance. It is particularly suitable for medium voltage applications such as switching, power management and motor control.

Application Field:

The SI1431DH-T1-E3 MOSFET is widely used in medium voltage applications such as switching, power management and motor control. It can also be used for high-efficiency, low power consumption voltage and current sensing applications. This device is typically used for low-voltage DC-DC conversion, switch mode power supplies (SMPS), motor drives, and battery management systems.

Working Principle:

The SI1431DH-T1-E3 MOSFET is an enhancement-mode power MOSFET. It operates on the principle of voltage control. When the voltage across the gate and source terminals is increased, a conducting channel is created between the drain and source terminals. This conducts current from the drain to the source, allowing the controlled current to flow through the load. The voltage across the drain and source terminals is known as the drain-source voltage (VDS). The current flow is controlled by adjusting the supply voltage (VGS) across the gate and source terminals.

When the voltage applied to the gate terminal is increased beyond the threshold voltage (VGS(th)), a conducting channel is formed. The conducting channel enables the current to flow through the device in the form of electrons. Since these electrons can only move from the source to the drain, a depletion zone is formed between them. The depletion zone is known as the resistance-drain source (RDS). This resistance limits the flow of electrons and therefore controls the current. The larger the voltage applied across the gate and source terminals, the larger the threshold voltage and the higher the RDS.

The SI1431DH-T1-E3 MOSFET also offers improved switching performance due to its low input capacitance and gate-source charge. With its fast switching speeds and low-input capacitance, the SI1431DH-T1-E3 is well-suited for high-frequency, high-efficiency applications. The device also features an integrated body diode for greater circuit protection.

The SI1431DH-T1-E3 MOSFET is suitable for a variety of medium voltage applications, including switching, battery management, motor control, power management, voltage and current sensing applications, and is compatible with numerous integrated circuit (IC) controllers such as the PIC and AVR microcontrollers. This device is also offered in both surface-mount and through-hole packages and can operate in temperatures ranging from -55°C to 150°C.

In conclusion, the SI1431DH-T1-E3 is an advanced, low-cost, low-input capacitance single N-channel enhancement-mode power MOSFET. It is ideal for medium voltage applications such as switching, power management, motor control, voltage and current sensing applications. The device also offers improved switching performance with its low input capacitance and gate-source charge. It is available in both surface-mount and through-hole packages and can operate in temperatures ranging from -55°C to 150°C.

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