SI1431DH-T1-GE3 Allicdata Electronics
Allicdata Part #:

SI1431DH-T1-GE3-ND

Manufacturer Part#:

SI1431DH-T1-GE3

Price: $ 0.18
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET P-CH 30V 1.7A SOT363
More Detail: P-Channel 30V 1.7A (Ta) 950mW (Ta) Surface Mount S...
DataSheet: SI1431DH-T1-GE3 datasheetSI1431DH-T1-GE3 Datasheet/PDF
Quantity: 1000
3000 +: $ 0.15758
Stock 1000Can Ship Immediately
$ 0.18
Specifications
Vgs(th) (Max) @ Id: 3V @ 100µA
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-70-6 (SOT-363)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 950mW (Ta)
FET Feature: --
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V
Series: TrenchFET®
Rds On (Max) @ Id, Vgs: 200 mOhm @ 2A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The SI1431DH-T1-GE3 is a highly reliable and robust semiconductor device manufactured by SanRex Corporation. It is a single, N-channel, Enhancement-mode insulated gate bipolar transistor (IGBT) designed for use in a wide variety of applications including power conversion, motor control, and SOLAR energy harvesting. The SI1431DH-T1-GE3 is designed to provide excellent linearity and accuracy as well as low noise and distortion.

The SI1431DH-T1-GE3 is a MOSFET-type device and operates in the enhancement mode. The construction of the transistor consists of two terminals, the gate terminal and the collector terminal. The gate terminal is used to control the flow of electrons through the device by increasing or decreasing the voltage applied to the terminal. When the voltage applied to the gate terminal increases, electrons flow from the collector terminal to the gate terminal and the device is turned on. When the voltage decreases, electrons are blocked from flowing and the device is turned off. The voltage applied to the gate terminal is referred to as the gate voltage.

Operation of the SI1431DH-T1-GE3 is based on the fractional charge of electrons moving through the channel of the device. When enough voltage is applied to the gate terminal, a channel is formed which allows electrons to flow from the collector terminal to the gate terminal. This flow of electrons is referred to as the on-state current. As the voltage increases, the on-state current also increases. The SI1431DH-T1-GE3 can handle high current levels, up to 20 amp and is rated for up to 15 volts at the gate terminal.

The SI1431DH-T1-GE3 can be used in many applications such as DC-DC converters, motor drives, AC-DC converters, solar energy harvesting, and other power electronics applications. The SI1431DH-T1-GE3 has a wide operating temperature range, up to 150°C, making it suitable for applications in extreme environments such as high altitudes or outdoor environments. Additionally, the device is RoHS compliant and features low voltage turn-on and long switching times, making it ideal for a variety of power electronics applications.

The SI1431DH-T1-GE3 can also be used in a variety of industrial applications such as HVAC systems, industrial machinery, oil and gas applications, and automotive applications. The SI1431DH-T1-GE3 is designed to meet the demanding requirements of these industrial applications, providing a robust, reliable, and highly efficient solution for power conversion applications.

In conclusion, the SI1431DH-T1-GE3 is a highly reliable and robust single N-channel MOSFET device from SanRex Corporation. The device is designed to provide excellent linearity and accuracy, low noise, and distortion. It is ideal for a variety of applications such as power conversion, motor control, and solar energy harvesting. With a wide operating temperature range, low voltage turn-on, and long switching times, the SI1431DH-T1-GE3 is the ideal solution for many power electronics applications.

The specific data is subject to PDF, and the above content is for reference

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