| Allicdata Part #: | SI1404BDH-T1-GE3-ND |
| Manufacturer Part#: |
SI1404BDH-T1-GE3 |
| Price: | $ 0.18 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Vishay Siliconix |
| Short Description: | MOSFET N-CH 30V 1.9A SOT363 |
| More Detail: | N-Channel 30V 1.9A (Ta), 2.37A (Tc) 1.32W (Ta), 2.... |
| DataSheet: | SI1404BDH-T1-GE3 Datasheet/PDF |
| Quantity: | 1000 |
| 3000 +: | $ 0.15758 |
| Vgs(th) (Max) @ Id: | 1.3V @ 250µA |
| Package / Case: | 6-TSSOP, SC-88, SOT-363 |
| Supplier Device Package: | SC-70-6 (SOT-363) |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 1.32W (Ta), 2.28W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 100pF @ 15V |
| Vgs (Max): | ±12V |
| Gate Charge (Qg) (Max) @ Vgs: | 2.7nC @ 4.5V |
| Series: | TrenchFET® |
| Rds On (Max) @ Id, Vgs: | 238 mOhm @ 1.9A, 4.5V |
| Drive Voltage (Max Rds On, Min Rds On): | 2.5V, 4.5V |
| Current - Continuous Drain (Id) @ 25°C: | 1.9A (Ta), 2.37A (Tc) |
| Drain to Source Voltage (Vdss): | 30V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
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The SI1404BDH-T1-GE3 is a logic-level n-channel power MOSFET. It is designed to operate at voltages up to 30 V and with currents up to 6 A. The SI1404BDH-T1-GE3 is a type of transistor that employs a field-effect to control the electrical characteristics of the device. In this type of transistor, the voltage applied to a gate terminal controls the current through the other terminal. The SI1404BDH-T1-GE3 is a power MOSFET and is ideal for switching, amplifying, buffering, and other applications where high-speed and high current are required, such as motor control circuits, switching power supplies, DC/DC converters, motor driving and other power electronic circuits.
The SI1404BDH-T1-GE3 is a pairing of a drain terminal and a gate terminal in which the current from the drain is controlled by the voltage applied to the gate. This type of transistor works on the principle of the electric field effect. When a voltage is applied to the gate terminal, it creates a field which causes electrons to be attracted to the gate region. This creates a larger number of electrons around the gate and reduces the resistance between the source and drain terminals. The change in the number of electrons changes the conductivity of the transistor, making it more or less conductive. As a result, the current through the terminals can be controlled. In addition, the SI1404BDH-T1-GE3 features excellent switching characteristics and low gate charge, making it ideal for switching applications.
The SI1404BDH-T1-GE3 is a versatile device that can be used in a wide variety of applications. It is often used to amplify, switch, and buffer signals in audio and video applications, such as TVs, VCRs, and amplifiers. It is also used in motor control to control the speed and torque of motors, as well as in switch-mode power supplies to regulate the voltage and current. In addition, the SI1404BDH-T1-GE3 is well suited for use in DC/DC converters, such as battery chargers and laptop adapters. Furthermore, it can be used in commercial and medical equipment, as well as in home appliances.
The SI1404BDH-T1-GE3 is a versatile and reliable logic-level n-channel power MOSFET. Thanks to its excellent switching characteristics and low gate charge, it is well suited for use in applications that require fast switching, as well as in applications that require high current. From audio and video applications to motor control and power supplies, the SI1404BDH-T1-GE3 can be used for a variety of applications. It is an excellent choice for anyone looking for a highly-reliable and versatile MOSFET.
The specific data is subject to PDF, and the above content is for reference
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SI1404BDH-T1-GE3 Datasheet/PDF