SI1488DH-T1-GE3 Allicdata Electronics
Allicdata Part #:

SI1488DH-T1-GE3-ND

Manufacturer Part#:

SI1488DH-T1-GE3

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CH 20V 6.1A SC70-6
More Detail: N-Channel 20V 6.1A (Tc) 1.5W (Ta), 2.8W (Tc) Surfa...
DataSheet: SI1488DH-T1-GE3 datasheetSI1488DH-T1-GE3 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 950mV @ 250µA
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-70-6 (SOT-363)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.5W (Ta), 2.8W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 530pF @ 10V
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
Series: TrenchFET®
Rds On (Max) @ Id, Vgs: 49 mOhm @ 4.6A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 6.1A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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The SI1488DH-T1-GE3, commonly referred to as the FET, is one of the most popular and widely used types of transistors. It is a single MOSFET, which stands for Metal Oxide Semiconductor Field Effect Transistor, that is made up of a semiconductor material and is used in many electronic applications. It is often used for switching and signal amplification purposes, and is one of the most important and useful components of today’s electronic devices. In order to understand the application field and the working principle of the FET, it is important to first understand what a FET is, and how it works.

A FET is essentially a three terminal device, made of a semiconductor material. One of the terminals, known as the gate, is electrically charged when a voltage is applied. The voltage is used to control the flow of electrons in and out of the other two terminals, known as the source and the drain. When a voltage is applied to the gate, a small amount of current can flow through the material, which creates a field around the gate terminal. This field, known as an electrical field, is used to control the flow of electrons between the source and the drain. Depending on the voltage applied to the gate, more or fewer electrons can flow, allowing the user to control the output of the device.

Once the FET is powered, it can be used in many different applications. It can be used as an amplifier, since the voltage applied to the gate can control the amount of current flowing through the device. It can also be used as a switch in order to control the power to a device. In addition, many circuits require low power and the FET is very efficient in this regard. Finally, FETs can be used to control the speed of a motor, allowing a user to control the speed of a device without the need for an external power source.

The working principle of the FET is simple, yet very effective. As mentioned above, when a voltage is applied to the gate, it causes a field to form around the gate terminal, which controls the flow of electrons between the source and the drain. As a result, different voltages applied will allow different amounts of electrons to flow, resulting in different output voltages. This makes the FET very versatile, allowing it to be used in a variety of applications.

In conclusion, the SI1488DH-T1-GE3, or FET, is one of the most widely used transistors in today’s electronics. It is a single MOSFET, which stands for Metal Oxide Semiconductor Field Effect Transistor, and is made up of a semiconductor material. It is often used for switching and signal amplification purposes and is one of the most important and useful components of today’s electronic devices. When powered, the voltage applied to the gate creates an electrical field that controls the flow of electrons between the source and the drain. This makes the FET very versatile, allowing it to be used in a variety of applications, including amplifiers and switches.

The specific data is subject to PDF, and the above content is for reference

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