SI1413EDH-T1-E3 Discrete Semiconductor Products |
|
| Allicdata Part #: | SI1413EDH-T1-E3TR-ND |
| Manufacturer Part#: |
SI1413EDH-T1-E3 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Vishay Siliconix |
| Short Description: | MOSFET P-CH 20V 2.3A SC70-6 |
| More Detail: | P-Channel 20V 2.3A (Ta) 1W (Ta) Surface Mount SC-7... |
| DataSheet: |  SI1413EDH-T1-E3 Datasheet/PDF |
| Quantity: | 1000 |
Specifications
| Vgs(th) (Max) @ Id: | 450mV @ 100µA (Min) |
| Package / Case: | 6-TSSOP, SC-88, SOT-363 |
| Supplier Device Package: | SC-70-6 (SOT-363) |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 1W (Ta) |
| FET Feature: | -- |
| Vgs (Max): | ±12V |
| Gate Charge (Qg) (Max) @ Vgs: | 8nC @ 4.5V |
| Series: | TrenchFET® |
| Rds On (Max) @ Id, Vgs: | 115 mOhm @ 2.9A, 4.5V |
| Drive Voltage (Max Rds On, Min Rds On): | 1.8V, 4.5V |
| Current - Continuous Drain (Id) @ 25°C: | 2.3A (Ta) |
| Drain to Source Voltage (Vdss): | 20V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | P-Channel |
| Part Status: | Obsolete |
| Packaging: | Tape & Reel (TR) |
Description
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The SI1413EDH-T1-E3: An Application Field and Working Principle OverviewThe SI1413EDH-T1-E3 is an enhancement-mode, silicon field-effect transistor (FET) that is suitable for use in automated test applications. The FET is an important component in the design of systems that utilize an active low-voltage protection system. In this article, we will discuss the application field and working principle of the SI1413EDH-T1-E3, as well as some of the key features of this FET.Application FieldThe SI1413EDH-T1-E3 is ideal for use in High Voltage Protection Power Supply (HVPS) and active low-voltage protection systems. These systems are designed to protect sensitive electronic components from over-voltage and electrical shock. The FET is designed to provide protection against over-voltage and electrical shock in applications such as personal computers, game consoles, power supplies, and other consumer electronics.The SI1413EDH-T1-E3 features an unusually high current-carrying capability, making it suitable for use in high-current applications. This FET can provide a maximum current rating of 2A, which is significantly higher than other MOSFETs of similar size. Additionally, the high current-carrying capability of the FET makes it well suited for use in power control and pulse power applications.Working PrincipleThe SI1413EDH-T1-E3 is an enhancement-mode FET, meaning it will remain off (open) until a signal is applied to its gate. The FET features an internally integrated high voltage (VH) protection device, which is used to protect the gate of the FET from high voltages.When a signal is applied to the gate of the FET, it turns on (close) and provides a conducting path between the source and drain. The level of current that is allowed to flow through the FET is determined by the voltage applied to the gate and is referred to as the threshhold voltage. The higher the threshold voltage, the more current will be allowed to flow through the FET.ConclusionThe SI1413EDH-T1-E3 is a single enhancement-mode FET that is well suited for use in HVPS and active low-voltage protection systems, as well as in high-current applications such as power supplies and pulse power applications. This FET is designed to provide over-voltage protection and shock protection for sensitive electronic components, and is capable of carrying a maximum current of 2A. The FET\'s working principle is characterized by a threshhold voltage that determines the level of current that is allowed to flow through it.The specific data is subject to PDF, and the above content is for reference
Related Products
Search Part number : "SI14" Included word is 40
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
| SI1450DH-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 8V 4.53A SC70... |
| SI1417EDH-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET P-CH 12V 2.7A SC70... |
| SI1499DH-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET P-CH 8V 1.6A SC70-... |
| SI1426DH-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 30V 2.8A SC-7... |
| SI1489EDH-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET P-CH 8V 2A SOT-363... |
| SI1400DL-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 20V 1.6A SC-7... |
| SI1471DH-T1-E3 | Vishay Silic... | -- | 6000 | MOSFET P-CH 30V 2.7A SC70... |
| SI1467DH-T1-GE3 | Vishay Silic... | 0.2 $ | 1000 | MOSFET P-CH 20V 2.7A SC-7... |
| SI1473DH-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET P-CH 30V 2.7A SC70... |
| SI1410EDH-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 20V 2.9A SC70... |
| SI1413EDH-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET P-CH 20V 2.3A SC-7... |
| SI1472DH-T1-E3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 30V 5.6A SC70... |
| SI1431DH-T1-E3 | Vishay Silic... | 0.18 $ | 1000 | MOSFET P-CH 30V 1.7A SOT3... |
| SI1401EDH-T1-GE3 | Vishay Silic... | -- | 3000 | MOSFET P-CH 12V 4A SC-70-... |
| SI1431DH-T1-GE3 | Vishay Silic... | 0.18 $ | 1000 | MOSFET P-CH 30V 1.7A SOT3... |
| SI1488DH-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 20V 6.1A SC70... |
| SI1428EDH-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CHANNEL 30V 4A S... |
| SI1414DH-T1-GE3 | Vishay Silic... | 0.11 $ | 1000 | MOSFET N-CH 30V 4A SOT-36... |
| SI1471DH-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET P-CH 30V 2.7A SC-7... |
| SI1443EDH-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET P-CH 30V 4A SOT-36... |
| SI1403BDL-T1-GE3 | Vishay Silic... | -- | 6000 | MOSFET P-CH 20V 1.5A SC70... |
| SI1433DH-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET P-CH 30V 1.9A SC70... |
| SI1402DH-T1-E3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 30V 2.7A SOT3... |
| SI1424EDH-T1-GE3 | Vishay Silic... | -- | 6000 | MOSFET N-CH 20V 4A SOT-36... |
| SI1405DL-T1-E3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET P-CH 8V 1.6A SC-70... |
| SI1488DH-T1-E3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 20V 6.1A SC70... |
| SI1441EDH-T1-GE3 | Vishay Silic... | -- | 3000 | MOSFET P-CH 20V 4A SOT-36... |
| SI1419DH-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET P-CH 200V 0.3A SC7... |
| SI1413EDH-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET P-CH 20V 2.3A SC70... |
| SI1416EDH-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 30V 3.9A SOT-... |
| SI1442DH-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 12V 4A SOT-36... |
| SI1405BDH-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET P-CH 8V 1.6A SC-70... |
| SI1405DL-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET P-CH 8V 1.6A SC-70... |
| SI1427EDH-T1-GE3 | Vishay Silic... | -- | 6000 | MOSFET P-CH 20V 2A SOT-36... |
| SI1402DH-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 30V 2.7A SOT3... |
| SI1406DH-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 20V 3.1A SC-7... |
| SI1417EDH-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET P-CH 12V 2.7A SC-7... |
| SI1413DH-T1-E3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET P-CH 20V 2.3A SC-7... |
| SI1404BDH-T1-GE3 | Vishay Silic... | 0.18 $ | 1000 | MOSFET N-CH 30V 1.9A SOT3... |
| SI1413DH-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET P-CH 20V 2.3A SC-7... |
Latest Products
IRFL31N20D
MOSFET N-CH 200V 31A D2PAKN-Channel 200V...
IXTT440N055T2
MOSFET N-CH 55V 440A TO-268N-Channel 55V...
IXTH14N80
MOSFET N-CH 800V 14A TO-247N-Channel 800...
IXFT23N60Q
MOSFET N-CH 600V 23A TO-268(D3)N-Channel...
IXTT72N20
MOSFET N-CH 200V 72A TO-268N-Channel 200...
IXFT9N80Q
MOSFET N-CH 800V 9A TO-268N-Channel 800V...