SI1405BDH-T1-GE3

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The SI1405BDH-T1-GE3 is a high performance N-Channel Enhancement mode Field Effect Transistor (FET). It is part of a broad range of FETs from rocSEMI, which is one of the leading companies in this highly competitive industry. This particular FET model is especially designed for switching applications, in which low on-resistance and high voltage capabilities are important.

This SI1405BDH-T1-GE3 FET works in Enhancement mode, which is based on an N-channel enhancement mode field effect transistor (FET). Its type of operation is mainly determined by the polarity of the drain voltage (Vd) and the gate voltage (Vg). When the gate voltage is more positive than the source voltage (Vgs), a channel opens and current flows in the channel. When the gate voltage is lower than the source voltage (Vgs), the channel is not opened and no current can flow through it. This type of switching operation is used in many electronic circuits due to its low cost, low power consumption and fast switching speed.

The SI1405BDH-T1-GE3 FET is an N-channel enhancement mode FET, meaning that it is designed to operate with a negative gate voltage. It has a low on-resistance of 14 Ohms and a breakdown voltage of 40V. This FET is specially designed for use in switch-mode power supply (SMPS) applications, where a high degree of efficiency is required. The SI1405BDH-T1-GE3 FET also has a low threshold voltage, which makes it ideal for use in low voltage switch circuits. It has a drain-source breakdown voltage of 40V, which means that it can withstand a high voltage spike, ensuring that the circuit continues to operate properly.

The SI1405BDH-T1-GE3 FET is made using the latest advanced manufacturing techniques and technologies. It is fabricated using gold metal silicide technology and a DS6, an advanced high-speed metal gate process. It is tested to deliver superior performance and reliability. The FET is designed with a flat-top gate structure, which improves performance and increases gate capacitance. The device also has a fast switching time and a low on-resistance, making it ideal for use in high-speed switches and in high voltage applications.In conclusion, the SI1405BDH-T1-GE3 FET is a high-performance N-channel enhancement mode field effect transistor. It is an excellent choice for switching applications, as it offers low on-resistance, high voltage capability and fast switching time. It is also tested to deliver superior performance and reliability, ensuring a long product life. This FET is an ideal choice for use in a wide range of applications, from low voltage switches to high voltage devices.

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