SI1469DH-T1-GE3 Discrete Semiconductor Products

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The SI1469DH-T1-GE3 is a N-Channel 30V integrated power MOSFET that is specifically designed for battery-powered applications. It is ideal for power switch applications, such as those for sleep modes, DC-DC converters, and low-side drivers. With an on-resistance of 0.028Ω (@ Vgs=10V, Id=3A) and fast body diode, this device ensures superior performance, excellent transient load switching, and low power loss. It also features an integrated ESD protection diode, which helps protect the device from ESD events.

The SI1469DH-T1-GE3 integrates a low Ron DMOS transistor, a gate driver, and a series current limiting resistor into a single package. The low gate charge of 10nC and the gate to source voltage threshold of 2.5V make the device ideal for battery-powered applications. The low threshold voltage helps reduce power dissipation due to the gate drive of the MOSFET. The integrated current limiting resistor is optimized for low battery voltage operation, providing robust protection.

The SI1469DH-T1-GE3 also features a fast body diode that charges the body diode to ensure fast turn off of the power switching circuit, helping reduce switching loss and improve system efficiency. It is capable of withstanding a peak current of 6A for a duration of 10μs. The device has an operating temperature range of -40°C to 85°C, making it suitable for applications in a variety of environments.

The SI1469DH-T1-GE3 is designed to be used as a low-side power switch in a variety of battery-powered applications. It is capable of switching up to 30V, with an on-resistance of 0.028Ω. It also features an integrated ESD protection diode, fast body diode and low gate charge, making it a perfect choice for low-power switching applications. The SI1469DH-T1-GE3 is ideal for sleep modes, DC-DC converters, and low-side drivers, and is able to withstand a peak current of 6A for 10μs.

The working principle of the SI1469DH-T1-GE3 is simple; when a voltage higher than 2.5V (the device\'s threshold voltage) is applied to the gate of the MOSFET, the device is turned on, and the MOSFET\'s channel is opened. This allows current to flow from the drain to the source. When the gate voltage falls below 2.5V, the device is turned off and the channel closes, stopping the flow of current. The integration of a low Ron DMOS transistor, a gate driver, and a series current limiting resistor allows the MOSFET to operate as an effective low-side power switch.

The SI1469DH-T1-GE3 is a single-channel low-side power switch designed for battery-powered applications that require high efficiency, low power losses, and excellent transient load switching. The device\'s low Ron and fast body diode enable superior performance, while its integrated ESD protection diode provides robust protection against ESD events. The wide operating temperature range and low gate charge make the device suitable for a variety of applications.

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