SI1411DH-T1-GE3 Allicdata Electronics
Allicdata Part #:

SI1411DH-T1-GE3TR-ND

Manufacturer Part#:

SI1411DH-T1-GE3

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET P-CH 150V 420MA SC70
More Detail: P-Channel 150V 420mA (Ta) 1W (Ta) Surface Mount SO...
DataSheet: SI1411DH-T1-GE3 datasheetSI1411DH-T1-GE3 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1W (Ta)
FET Feature: --
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 6.3nC @ 10V
Series: TrenchFET®
Rds On (Max) @ Id, Vgs: 2.6 Ohm @ 500mA, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 420mA (Ta)
Drain to Source Voltage (Vdss): 150V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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SI1411DH-T1-GE3 is a type of field-effect transistor (FET), which are semiconductor devices that are designed to control and regulate electrical current in circuit boards. FETs have many applications and have been used in various consumer and industrial applications for decades. The SI1411DH-T1-GE3 is a single FET, which means it is composed of only one FET.A single FET works by controlling the flow of current through an N-Type semiconductor material (most commonly silicon) which has the transistor structure bonded to it. The transistor has two terminals which are connected to the N-Type material and two control terminals called the source and the drain. When a voltage is applied to the source terminal, electrons will flow into the base of the N-Type material, thus creating an electric field. This electric field causes the electrons to move to the drain and away from the source, creating a current in the process. This current will continue to flow until the applied voltage is removed.Single FETs have a wide range of applications. For example, they can be used in radio frequency amplifiers, switching regulators, and voltage followers. They are also used in logic circuits and computer memory.The SI1411DH-T1-GE3 is specifically designed for high-speed switching applications and is used in high-speed inverters, motor drivers, power supplies, and operational amplifiers. It is capable of handling up to 20V, and is temperature-stable, making it suitable for operating in harsh environments. It also has a high switching speed, making it ideal for applications that require rapid response times.In addition to its applications in high-speed switching circuits, the SI1411DH-T1-GE3 can also be used in linear voltage regulators. It features a low on-resistance (Rds) of 550 mΩ, which means it can provide a low dropout voltage, making it ideal for regulating power in sensitive devices.Overall, the SI1411DH-T1-GE3 is a versatile single FET which can be used in a wide range of applications. It offers reliability, high switching speeds, low resistance, and temperature stability. This makes it a great choice for high-speed inverters, motor drivers, power supplies, and regulator circuits, as well as logic and computer memory applications.

The specific data is subject to PDF, and the above content is for reference

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