SI1433DH-T1-E3 Allicdata Electronics
Allicdata Part #:

SI1433DH-T1-E3TR-ND

Manufacturer Part#:

SI1433DH-T1-E3

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET P-CH 30V 1.9A SC70-6
More Detail: P-Channel 30V 1.9A (Ta) 950mW (Ta) Surface Mount S...
DataSheet: SI1433DH-T1-E3 datasheetSI1433DH-T1-E3 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 3V @ 100µA
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-70-6 (SOT-363)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 950mW (Ta)
FET Feature: --
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 5nC @ 4.5V
Series: TrenchFET®
Rds On (Max) @ Id, Vgs: 150 mOhm @ 2.2A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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The SI1433DH-T1-E3 is a type of transistor known as a metal-oxide-semiconductor field-effect transistor (MOSFET). It belongs to a category of transistors known as single FETs, or JFETs, which are especially designed for amplification and switching applications. This article describes the application field and working principle of the SI1433DH-T1-E3, as well as its advantages and disadvantages.

The SI1433DH-T1-E3 offers high performance, low power dissipation, small size, and low cost in comparison to other types of transistors. It is particularly suited for high frequency and high current applications, and is widely used in modern electronic devices such as power amplifiers, DC-DC converters, robotics, and signal processing systems.

The working principle of the SI1433DH-T1-E3 is based on the physical process of surface potential modulation, which results from the injection of electrons into the semiconductor substrate. When a voltage is applied to the gate of the MOSFET, the resulting electric field causes the electrons to be injected into the semiconductor substrate, creating a modulation of the surface potential and controlling the current flowing through the device. This allows the MOSFET to act as either an amplifier or a switch, depending on the voltage applied to the gate.

The main advantages of using the SI1433DH-T1-E3 are its high currents, low power consumption, small size, and low cost. Its high frequency capability makes it suitable for a wide range of applications, including communications, power supply management, and instrumentation. It is also able to handle higher current levels than other transistors, making it an ideal choice for applications requiring high currents. Although it has a low input capacitance, its output impedance is high, which limits its use in some applications.

The SI1433DH-T1-E3 is a cost-effective, efficient transistor for many applications, including amplifiers, switches, converters, and many other electronic devices. Its high capabilities, small size, low cost, and low power consumption make it a popular choice for many modern electronic applications.

The specific data is subject to PDF, and the above content is for reference

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