SI1403CDL-T1-GE3

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

A field-effect transistor (FET) is an electronic device that controls the flow of current between two terminals or gate electrodes by the application of an electric field. The SI1403CDL-T1-GE3 is an enhancement-mode high side N-channel MOSFET specifically designed for Power Management applications. This FET offers excellent performance in terms of high reliability, low on-state resistance, and low threshold voltage.

The SI1403CDL-T1-GE3 is available in a variety of packages and is ideal for use in a variety of automotive and consumer applications. It features an integrated ESD protection on the drain that offers robust ESD protection. The FET is also capable of operating up to 30V, making it well-suited for a range of use cases.

One of the primary advantages of this FET is its low on-state resistance, which allows for higher operating currents and lower switching losses. This makes the FET ideal for high-efficiency power management applications, such as notebook computers, mobile phones, and other portable electronic devices. It is also suitable for use in applications that require increased power density such as automotive powertrains and power electronics.

The SI1403CDL-T1-GE3 is typically used in low voltage applications such as 5V, 12V, and 24V. This is due to its lower threshold voltage, which reduces the power requirement of the FET. This makes it an ideal solution for applications that demand high efficiency and low power consumption. The FET is also suitable for applications where pulse width modulation is required for variable power control.

The working principle of the SI1403CDL-T1-GE3 is based on the field effect principle. In this type of FET, the electric field applied between the gate and the source of the FET modulates the current flowing between the source and the drain. When a positive voltage is applied to the gate, it attracts the electrons from the source to the drain, thus allowing the current to flow. Conversely, when a negative voltage is applied to the gate, it repels the electrons from the source to the drain, thus preventing the current from flowing.

The SI1403CDL-T1-GE3 is a reliable, efficient and cost-effective FET suitable for a range of applications such as automotive and consumer electronics, power management, and pulse width modulation. This FET offers high reliability and low on-state resistance, enabling increased efficiency and power density. It is also capable of operating at high voltages, making it suitable for a variety of use cases. The integrated ESD protection on the drain helps to protect the device from ESD events.

The specific data is subject to PDF, and the above content is for reference