
Allicdata Part #: | SI1470DH-T1-E3TR-ND |
Manufacturer Part#: |
SI1470DH-T1-E3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 30V 5.1A SC70-6 |
More Detail: | N-Channel 30V 5.1A (Tc) 1.5W (Ta), 2.8W (Tc) Surfa... |
DataSheet: | ![]() |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 1.6V @ 250µA |
Package / Case: | 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package: | SC-70-6 (SOT-363) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 1.5W (Ta), 2.8W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 510pF @ 15V |
Vgs (Max): | ±12V |
Gate Charge (Qg) (Max) @ Vgs: | 7.5nC @ 5V |
Series: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 66 mOhm @ 3.8A, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 2.5V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 5.1A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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SI1470DH-T1-E3 is a single FET (Field Effect Transistor) that offers a wide range of uses in a variety of devices and systems. It is one of the most widely used FETs, thanks to its advantages in size, power and efficiency. This article will discuss the application field and working principle of the SI1470DH-T1-E3 FET.
FETs are important components in many electronic circuits, as they provide efficient and dependable switching, as well as linear amplification when combined with resistors. FETs like SI1470DH-T1-E3 can be used in a variety of applications, such as in automobiles, motor control, power supplies, and telecommunications. They can also be used for low-power applications, such as in audio amplifiers. The SI1470DH-T1-E3 FET is capable of low-current operation and can handle a wide range of voltages. This makes it ideal for high-current applications, such as power amplification, audio power amplifiers, and motor control.
The SI1470DH-T1-E3 FET works on the principle of field-effect conduction, where an electric field is generated between two plates, causing them to conduct electric current. FETs consist of three terminals, the source, gate and drain. The electric field is generated between the source and the drain. By applying a small voltage to the gate, the electric field between the source and the drain is modified, resulting in electric current flow between them. This is how FETs are able to amplify electric signals, provide switching or linear amplification when synchronized with resistors.
The SI1470DH-T1-E3 FET is one of the most popularly used FETs due to its size, power, and efficiency. It is capable of carrying high currents, making it ideal for most power amplification applications, as well as small signal switching and low-power applications. It is available in a variety of packages, such as surface-mount and through-hole, making it suitable for wide range of applications.
In conclusion, SI1470DH-T1-E3 is a single FET that offers a wide range of uses in a variety of devices and systems. It works on the principle of field-effect conduction, where an electric field is generated between two plates, causing them to conduct electric current. It is capable of carrying high currents, making it ideal for most power amplification applications, as well as small signal switching and low-power applications.
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