| Allicdata Part #: | SI1473DH-T1-GE3TR-ND |
| Manufacturer Part#: |
SI1473DH-T1-GE3 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Vishay Siliconix |
| Short Description: | MOSFET P-CH 30V 2.7A SC-70-6 |
| More Detail: | P-Channel 30V 2.7A (Tc) 1.5W (Ta), 2.78W (Tc) Surf... |
| DataSheet: |  SI1473DH-T1-GE3 Datasheet/PDF |
| Quantity: | 1000 |
Specifications
| Vgs(th) (Max) @ Id: | 3V @ 250µA |
| Package / Case: | 6-TSSOP, SC-88, SOT-363 |
| Supplier Device Package: | SC-70-6 (SOT-363) |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 1.5W (Ta), 2.78W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 365pF @ 15V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 6.2nC @ 4.5V |
| Series: | TrenchFET® |
| Rds On (Max) @ Id, Vgs: | 100 mOhm @ 2A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 2.7A (Tc) |
| Drain to Source Voltage (Vdss): | 30V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | P-Channel |
| Part Status: | Obsolete |
| Packaging: | Tape & Reel (TR) |
Description
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The SI1473DH-T1-GE3 is a small-signal, low-voltage, N-channel enhancement-mode power MOSFET transistor. Characterized by a low on-resistance and low gate-source threshold voltage, this transistor is designed for general-purpose applications, high dynamic performance, and improved junction temperature stability. With its pin configurations and small size, the SI1473DH-T1-GE3 can be used in applications where space is a constraint.A MOSFET (or Metal Oxide Semiconductor Field Effect Transistor) operates as a switch that is used to control the flow of current in the circuit when an electric signal is applied to its gate terminal. The user can vary the on and off resistance of the transistor by controlling the voltage level present at its gate terminal. When the gate voltage is at its lowest level, the transistor is switched off and the current flow through it is minimized. When a higher gate voltage is applied, the bias voltage is increased and the current flow through the MOSFET increases.Most MOSFET transistors consist of three terminals, the drain, the source, and the gate. The drain is typically connected to the positive voltage supply and the source connected to the negative supply. The gate controls the on and off state of the MOSFET, and when a positive voltage is applied to the gate, the transistor turns on and the current is allowed to flow from the drain to the source. When the gate voltage is turned off, the transistor turns off and the current does not flow. By controlling the voltages applied to the gate, one can effectively control the current flow through the transistor.The SI1473DH-T1-GE3 is designed to operate in a very low voltage environment, with a maximum gate-source voltage of just 2.5V. Its low on-resistance and low gate-source threshold voltage make it ideal for applications that need to regulate and regulate the current flow, such as power supplies and amplifier circuits. It is also designed to withstand high temperatures and is often used in portable and automotive electronics applications.The SI1473DH-T1-GE3 has an optimized package layout and is available in a tiny variety of packages that make it suitable for use in a wide range of applications. Its smaller size and enhanced features make it an excellent choice for space-constrained applications such as cell phones, laptops, and other consumer electronic devices. The SI1473DH-T1-GE3 is an efficient and cost-effective solution for controlling current in consumer electronic devices. It is easy to install and operate, and its enhanced features make it a great choice for those looking for a reliable and high-performance MOSFET transistor.
The specific data is subject to PDF, and the above content is for reference
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