SI5902BDC-T1-E3 Discrete Semiconductor Products |
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Allicdata Part #: | SI5902BDC-T1-E3TR-ND |
Manufacturer Part#: |
SI5902BDC-T1-E3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET 2N-CH 30V 4A 1206-8 |
More Detail: | Mosfet Array 2 N-Channel (Dual) 30V 4A (Tc) 3.12W ... |
DataSheet: | SI5902BDC-T1-E3 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Base Part Number: | SI5902 |
Supplier Device Package: | 1206-8 ChipFET™ |
Package / Case: | 8-SMD, Flat Lead |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power - Max: | 3.12W |
Input Capacitance (Ciss) (Max) @ Vds: | 220pF @ 15V |
Gate Charge (Qg) (Max) @ Vgs: | 7nC @ 10V |
Series: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 65 mOhm @ 3.1A, 10V |
Current - Continuous Drain (Id) @ 25°C: | 4A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
FET Feature: | Logic Level Gate |
FET Type: | 2 N-Channel (Dual) |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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SI5902BDC-T1-E3 is an arrangement of power MOSFETs in a three-terminal package. It is intended for use in an array of power supply applications and has been designed to provide an effective and reliable solution for controlling excessive load current and switching high voltages. This article will examine the specific application field of SI5902BDC-T1-E3 and its working principle.
SI5902BDC-T1-E3 is usually employed in automotive power conditioning systems. It helps in providing high current gain and low on-state resistance for intelligently controlling currents. It is used in battery charging applications and also in high-temperature/high-side control circuits. This package is reliable in harsh environments and has excellent power efficiency, making it a great solution for automotive applications.
The SI5902BDC-T1-E3 provides a power MOSFET array that is capable of controlling high loads and switching high voltages. It includes three N-channel MOSFETs, with a total on-state resistance of 490 mOhm, and can handle currents up to 8.0 Amps. This device is fabricated with accurate integrated circuits and large area avalanche requirements, providing reliable operation in harsh conditions. It can operate with a voltage range of 9V to 80V, meaning it can be applied in a wide variety of power supply applications.
The SI5902BDC-T1-E3 works by using the power MOSFET array to control the current flowing between the drain and source. This is accomplished by controlling the gate voltage to the array; when the gate voltage is high, current flows and when the gate voltage is low, no current is allowed to flow. The logic level of the gate determines whether the power MOSFET is in the "on" or "off" state.
In addition, the SI5902BDC-T1-E3 has excellent thermal performance and ESD tolerance, allowing reliable operation in harsh environments. It has an operating temperature range of -40°C to +105°C and its built-in ESD protection limits the input surge to 0.8V. This package is also resistant to humidity and other environmental factors, making it a valuable component in a variety of power management applications.
In conclusion, the SI5902BDC-T1-E3 is an arrangement of power MOSFETs that is intended for a broad range of automotive power conditioning systems. It provides current gain and low on-state resistance, which makes it ideal for high-temperature/high-side control circuits. In addition, it offers excellent thermal performance and ESD tolerance, making it suitable for use in harsh environments. This package can be applied in a range of power supply applications, from battery charging to power management.
The specific data is subject to PDF, and the above content is for reference
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SI5933CDC-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET 2P-CH 20V 3.7A 120... |
SI5933CDC-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET 2P-CH 20V 3.7A 120... |
SI5935CDC-T1-E3 | Vishay Silic... | 0.16 $ | 1000 | MOSFET 2P-CH 20V 4A 1206-... |
SI5904DC-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET 2N-CH 20V 3.1A 120... |
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