SI7302DN-T1-GE3

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The SI7302DN-T1-GE3 is a single N-channel MOSFET, which is classified as a Transistor - FETs, MOSFETs - Single series of products. It\'s fabricated using high-breakdown-voltage process design, so the breakdown voltage could reach up to 200V. What\'s more, its maximum drain current, maximum drain source voltage and gate source voltage are all designed within industrial grade range. With all these feature, SI7302DN-T1-GE3 provides good reliability and robustness and is widely used in power management and industrial control systems, such as DC/DC converters and motor control devices.

In addition to its common use of power management and industrial control system, SI7302DN-T1-GE3 can also be used in digital electronics. Thanks to its high power and low on-resistance, it is suitable to replace switches in digital electronic devices. It helps the electronic devices to improve its performance and its overall efficiency. It can also be used in medical electronics. SI7302DN-T1-GE3 has very low on-resistance and leakage current, so it can be used for medical electronics where leakage current and on-resistance play critical parts.

The working principle of SI7302DN-T1-GE3 is based on the same working principle of all FETs, MOSFETs. When a positive charge is applied to the gate terminal of a FET, the electron current is attracted to the gate electrode, producing a conductive layer in the channel region of the FET. As long as voltage is applied to the gate and drain terminals, the flow of electron current is possible. The current flow is proportional to the channel resistance when it is in the saturation region. In order to increase the resistance, a negative charge is applied to the gate terminal, if which then attracts electron current away from the gate electrode, resulting in a decreased area of conductive layer in the channel region.

Overall, SI7302DN-T1-GE3 is a power management and industrial control device with a high breakdown voltage and a wide variety of applications in the digital and medical electronics industries. Its working principle is the same as any other FETs, MOSFETs. It has low on-resistance and leakage current, making it suitable for processes which require low leakage current. As a result, it has become an important part of many power management and industrial control systems.

The specific data is subject to PDF, and the above content is for reference