SI7374DP-T1-GE3 Allicdata Electronics
Allicdata Part #:

SI7374DP-T1-GE3-ND

Manufacturer Part#:

SI7374DP-T1-GE3

Price: $ 1.22
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CH 30V 24A PPAK SO-8
More Detail: N-Channel 30V 24A (Tc) 5W (Ta), 56W (Tc) Surface M...
DataSheet: SI7374DP-T1-GE3 datasheetSI7374DP-T1-GE3 Datasheet/PDF
Quantity: 1000
3000 +: $ 1.09849
Stock 1000Can Ship Immediately
$ 1.22
Specifications
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 5W (Ta), 56W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 5500pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 122nC @ 10V
Series: TrenchFET®
Rds On (Max) @ Id, Vgs: 5.5 mOhm @ 23.8A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The SI7374DP-T1-GE3 is a P-Channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with a power handling capability of 8-volts and a maximum drain-source voltage of 5.5-volts. It is used for a variety of circuit protection and design applications where protection from over-current and/or over-voltage is necessary.

The SI7374DP-T1-GE3 is composed of an integrated circuit (IC) and a metal-oxide layer. The IC is a semiconductor device which allows electrical signals to pass through it. The metal-oxide layer is made up of titanium, which is a dielectric material. This allows the device to maintain its desired state even when subjected to different levels of electric current.

The working principle of the SI7374DP-T1-GE3 is quite simple. When it is connected to a power source, the metal-oxide layer works to control the flow of electric current. It essentially acts as a switch, allowing electric current to flow when the voltage is within a certain range, and stopping it when the voltage exceeds the range.

One common application of the SI7374DP-T1-GE3 is in the protection of electrical circuits from over-voltage, over-current, and other power surges. By installing the device in a circuit, the device will shut off the flow of electric current when it detects that the voltage is outside the desired range. This will protect the circuit from damage and can also help to maintain the circuit’s superior performance.

The SI7374DP-T1-GE3 can also be used in the design of new circuits. By using the device as a “switch”, designers can control which parts of a circuit are active or inactive. This helps to ensure the proper functioning of a circuit, while also saving on components and production cost.

The SI7374DP-T1-GE3 is a powerful and versatile piece of equipment that can be used for a variety of applications. It can be used for protection of electrical circuits, as well as for the design of new circuits. It is easy to install and simple to use, making it a popular option for those who need an effective solution for circuit protection or design.

The specific data is subject to PDF, and the above content is for reference

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